TC4423/TC4424/TC4425
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ................................................................+22V
Input Voltage, IN A or IN B
................................................ (V
DD
+ 0.3V) to (GND – 5V)
Package Power Dissipation (T
A
≤
70°C)
DFN .........................................................................
PDIP .......................................................................730 mW
SOIC.......................................................................470 mW
†
Notice:
Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, with 4.5V
≤
V
DD
≤
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection With-
stand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Power Supply Current
Note 1:
2:
I
S
—
—
1.5
0.15
2.5
0.25
mA
V
IN
= 3V (Both inputs)
V
IN
= 0V (Both inputs)
t
R
t
F
t
D1
t
D2
—
—
—
—
23
25
33
38
35
35
75
75
ns
ns
ns
ns
C
L
= 1800 pF
C
L
= 1800 pF
C
L
= 1800 pF
C
L
= 1800 pF
V
OH
V
OL
R
OH
R
OL
I
PK
I
REV
V
DD
– 0.025
—
—
—
—
—
—
—
2.8
3.5
3
>1.5
—
0.025
5
5
—
—
V
V
Ω
Ω
A
A
Duty cycle
≤
2%, t
≤
300 µsec.
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
IH
V
IL
I
IN
2.4
—
–1
—
—
—
—
0.8
1
V
V
µA
0V
≤
V
IN
≤
V
DD
Sym
Min
Typ
Max
Units
Conditions
Switching times ensured by design.
Package power dissipation is dependent on the copper pad area on the PCB.
2004 Microchip Technology Inc.
DS21421D-page 3