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JS28F00AM29EWLA 参数 Datasheet PDF下载

JS28F00AM29EWLA图片预览
型号: JS28F00AM29EWLA
PDF下载: 下载PDF文件 查看货源
内容描述: 并行NOR闪存的嵌入式存储器 [Parallel NOR Flash Embedded Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 75 页 / 855 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Program/Erase Characteristics
Program/Erase Characteristics
Table 33: Program/Erase Characteristics
Notes 1 and 2 apply to the entire table.
Parameter
Block erase (128KB)
Erase suspend latency time
Block erase timeout
Byte program
Single-byte program
Byte write to buffer program
Buffer
Size
64
128
256
Effective write to buffer
program per byte
Word program
Single-word program
Word write to buffer program
64
128
256
32
64
128
256
512
Effective write to buffer
program per word
32
64
128
256
512
Program suspend latency time
Blank check
PROGRAM/ERASE cycles (per block)
Erase to suspend
Notes:
Byte
64
128
256
1
1
1
Word
32
64
128
256
512
1
1
1
1
1
Min
50
100,000
Typ
0.8
27
210
270
310
375
4.22
2.42
1.46
210
270
310
375
505
900
8.44
4.84
2.93
1.97
1.76
27
3.2
500
Max
4
32
456
716
900
1140
11.2
7
4.45
456
716
900
1140
1690
3016
22.4
14.1
8.9
6.6
5.89
32
Unit
s
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
ms
cycles
µs
Notes
1. Typical values measured at room temperature and nominal voltages.
2. Typical and maximum values are sampled, but not 100% tested.
3. Erase to suspend is the typical time between an initial BLOCK ERASE or ERASE RESUME
command and a subsequent ERASE SUSPEND command. Violating the specification re-
peatedly during any particular block erase may cause erase failures.
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
71
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2012 Micron Technology, Inc. All rights reserved.