256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
DC Characteristics
DC Characteristics
Table 27: DC Current Characteristics
Parameter
Input leakage current
Output leakage current
VCC read
current
Random read
Page read
VCC standby
current
256Mb
512Mb
1Gb
2Gb
VCC program/erase/blank
check current
I
CC3
Program/
erase
controller
active
V
PP
/WP# = V
IL
or V
IH
V
PP
/WP# =
V
PPH
I
CC2
Symbol
I
LI
I
LO
I
CC1
Conditions
0V
≤
V
IN
≤
V
CC
0V
≤
V
OUT
≤
V
CC
CE# = V
IL
, OE# = V
IH
,
f
= 5 MHz
CE# = V
IL
, OE# = V
IH
,
f
= 13 MHz
CE# = V
CCQ
±0.2V,
RST# = V
CCQ
±0.2V
Min
–
–
–
–
–
–
–
–
–
–
–
–
I
PP2
I
PP3
I
PP4
RST# = V
SS
±0.2V
V
PP
/WP# = 12V ±5%
V
PP
/WP# = V
CC
V
PP
/WP# = 12V ±5%
V
PP
/WP# = V
CC
–
–
–
–
–
Typ
–
–
26
12
65
70
75
150
35
35
0.2
2
0.2
0.05
0.05
0.05
0.05
Max
±1
±1
31
16
210
225
240
480
50
50
5
15
5
0.10
0.10
0.10
0.10
Unit
µA
µA
mA
mA
µA
µA
µA
µA
mA
mA
µA
µA
µA
mA
mA
mA
mA
Notes
V
PP
current
Read
Standby
Reset
PROGRAM operation
ongoing
ERASE operation
ongoing
Notes:
I
PP1
V
PP
/WP#
≤
V
CC
1. The maximum input leakage current is ±5µA on the V
PP
/WP# pin.
2. Sampled only; not 100% tested.
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
57
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