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JS28F256P30TFA 参数 Datasheet PDF下载

JS28F256P30TFA图片预览
型号: JS28F256P30TFA
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 95 页 / 1340 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb and 512Mb (256Mb/256Mb), P30-65nm  
Common Flash Interface  
Table 30: One Time Programmable (OTP) Space Information (Continued)  
Hex Offset  
P = 10Ah  
Hex  
Code  
ASCII Value  
(DQ[7:0])  
Length  
Description  
Address  
119:  
OTP Field 1: OTP Description:  
- -80  
- -00  
- -03  
- -03  
80h  
00h  
This field describes user-available OTP bytes.  
Some are preprogrammed with device-unique se-  
rial numbers. Others are user-programmable.  
Bits 0-15 point to the OTP Lock byte (the first  
byte).  
11A:  
1B:  
8 byte  
8 byte  
11C:  
(P+F)h  
(P+10)h  
(P+11)h  
(P+12)h  
The following bytes are factory preprogrammed  
and user-programmable:  
Bits 0 - 7 = Lock/bytes JEDEC plane physical low  
address.  
4
Bits 8 - 15 = Lock/bytes JEDEC plane physical high  
address.  
Bits 16 - 23 = n where 2n equals factory preprog-  
rammed bytes.  
Bits 24 - 31 = n where 2n equals user-programma-  
ble bytes.  
(P+13)h  
(P+14)h  
(P+15)h  
(P+16)h  
10  
Protection field 2: protection description  
Bits 0 - 31 point to the protection register physi-  
cal lock word address in the JEDEC plane.  
The bytes that follow are factory or user-progam-  
mable.  
11D:  
11E:  
11F:  
120:  
- -89  
- -00  
- -00  
- -00  
89h  
00h  
00h  
00h  
(P+17)h  
(P+18)h  
(P+19)h  
Bits 32 - 39 = n where n equals factory program-  
med groups (low byte).  
Bits 40 - 47 = n where n equals factory program-  
med groups (high byte).  
121:  
122:  
123:  
- -00  
- -00  
- -00  
0
0
0
Bits 48 - 55 = n where 2n equals factory program-  
med bytes/groups.  
(P+1A)h  
(P+1B)h  
(P+1C)h  
Bits 56 - 63 = n where n equals user programmed  
groups (low byte).  
Bits 64 - 71 = n where n equals user programmed  
groups (high byte).  
Bits 72 - 79 = n where 2n equals user programma-  
ble bytes/groups.  
124:  
125:  
126:  
- -10  
- -00  
- -04  
16  
0
16  
Table 31: Burst Read Information  
Hex Offset  
Hex  
Code  
ASCII Value  
(DQ[7:0])  
P = 10Ah  
Length  
Description  
Address  
1
Page Mode Read capability:  
127:  
- -05  
32 byte  
Bits 7 - 0 = n where 2n hex value represents the  
number of read-page bytes. See offset 28h for  
device word width to determine page-mode data  
output width. 00h indicates no read page buffer.  
(P+1D)h  
PDF: 09005aef84566799  
p30_65nm_MLC_256Mb-512mb.pdf - Rev. A 1/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
59  
© 2013 Micron Technology, Inc. All rights reserved.