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JS28F256P30TFA 参数 Datasheet PDF下载

JS28F256P30TFA图片预览
型号: JS28F256P30TFA
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 95 页 / 1340 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb and 512Mb (256Mb/256Mb), P30-65nm  
AC Read Specifications  
Figure 35: Synchronous Burst Mode 4-Word Read  
tAVCH  
Latency count  
tAVQV  
tVLCH tCHAX  
CLK  
tAVVH  
A
A
tVHAX  
tVHVL  
tELVH  
ADV#  
tELCH  
tELQV  
tELQV  
CE#  
OE#  
tCHTX  
tGLTV  
tCHTV  
tCHQV  
tCHTX  
WAIT  
DQ  
tCHQV  
tCHQX  
tGLQV  
tGLQX  
tCHQX  
Q0  
Q1  
Q2  
Q3  
1. WAIT is driven per OE# assertion during synchronous array or non-array read. WAIT as-  
serted during initial latency and deasserted during valid data (RCR.10 = 0, WAIT asserted  
low).  
Note:  
PDF: 09005aef84566799  
p30_65nm_MLC_256Mb-512mb.pdf - Rev. A 1/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
88  
© 2013 Micron Technology, Inc. All rights reserved.