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JS28F512P30BF 参数 Datasheet PDF下载

JS28F512P30BF图片预览
型号: JS28F512P30BF
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 92 页 / 1225 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, 1Gb, 2Gb: P30-65nm
Pinouts and Ballouts
Pinouts and Ballouts
Figure 6: 56-Lead TSOP Pinout – 512Mb and 1Gb
A 16
A 15
A 14
A 13
A 12
A 11
A 10
A9
A 23
A 22
A 21
VSS
RFU
WE #
WP #
A 20
A 19
A 18
A8
A7
A6
A5
A4
A3
A2
A24
A25
A26
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
56-Lead TSOP Pinout
14mm x 20mm
Top View
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
WAIT
A17
DQ 15
DQ 7
DQ 14
DQ 6
DQ 13
DQ 5
DQ 12
DQ 4
ADV #
CLK
RST#
VPP
DQ 11
DQ 3
DQ 10
DQ 2
VCCQ
DQ 9
DQ 1
DQ 8
DQ 0
VCC
OE#
VSS
CE#
A1
Notes:
1.
2.
3.
4.
5.
A1 is the least significant address bit.
ADV# must be tied to V
SS
or driven to LOW throughout the asynchronous read mode.
A25 is valid for 512Mb densities and above; otherwise, it is a no connect (NC).
A26 is valid for 1Gb densities and above; otherwise, it is a no connect (NC).
One dimple on package denotes Pin 1 which will always be in the upper left corner of
the package, in reference to the product mark.
PDF: 09005aef845667b3
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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2013 Micron Technology, Inc. All rights reserved.