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JS28F512P30BF 参数 Datasheet PDF下载

JS28F512P30BF图片预览
型号: JS28F512P30BF
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 92 页 / 1225 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, 1Gb, 2Gb: P30-65nm
Device Command Codes
Device Command Codes
The system CPU provides control of all in-system READ, WRITE, and ERASE operations
of the device via the system bus. The device manages all block-erase and word-program
algorithms.
Device commands are written to the CUI to control all device operations. The CUI does
not occupy an addressable memory location; it is the mechanism through which the
device is controlled.
Note:
For a dual device, all setup commands should be re-issued to the device when a
different die is selected.
Table 6: Command Codes and Definitions
Mode
Read
Device Mode
Read array
Read status register
Code
0xFF
0x70
Description
Places the device in read array mode. Array data is output on DQ[15:0].
Places the device in read status register mode. The device enters this
mode after a PROGRAM or ERASE command is issued. Status register
data is output on DQ[7:0].
Places device in read device identifier mode. Subsequent reads output
manufacturer/device codes, configuration register data, block lock sta-
tus, or protection register data on DQ[15:0].
Places the device in read CFI mode. Subsequent reads output CFI infor-
mation on DQ[7:0].
The device sets status register error bits. The clear status register com-
mand is used to clear the SR error bits.
First cycle of a 2-cycle programming command; prepares the CUI for a
WRITE operation. On the next write cycle, the address and data are
latched and the device executes the programming algorithm at the ad-
dressed location. During PROGRAM operations, the device responds
only to READ STATUS REGISTER and PROGRAM SUSPEND commands.
CE# or OE# must be toggled to update the status register in asynchro-
nous read. CE# or ADV# must be toggled to update the status register
data for synchronous non-array reads. The READ ARRAY command
must be issued to read array data after programming has finished.
This command loads a variable number of words up to the buffer size
of 512 words onto the program buffer.
The CONFIRM command is issued after the data streaming for writing
into the buffer is completed. The device then performs the buffered
program algorithm, writing the data from the buffer to the memory
array.
First cycle of a two-cycle command; initiates buffered enhanced factory
program mode (BEFP). The CUI then waits for the BEFP CONFIRM com-
mand, 0xD0, that initiates the BEFP algorithm. All other commands are
ignored when BEFP mode begins.
If the previous command was BEFP SETUP (0x80), the CUI latches the
address and data, and prepares the device for BEFP mode.
Read device ID or
read configuration
register
Read CFI
Clear status register
Write
Word program setup
0x90
0x98
0x50
0x40
Buffered program
Buffered program
confirm
0xE8
0xD0
BEFP setup
0x80
BEFP confirm
0xD0
PDF: 09005aef845667b3
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN
19
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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2013 Micron Technology, Inc. All rights reserved.