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JS28F512P30TF 参数 Datasheet PDF下载

JS28F512P30TF图片预览
型号: JS28F512P30TF
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 92 页 / 1225 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, 1Gb, 2Gb: P30-65nm  
Signal Descriptions  
Table 4: TSOP and Easy BGA Signal Descriptions (Continued)  
Symbol  
Type  
Name and Function  
WAIT  
Output  
Wait: Indicates data valid in synchronous array or non-array burst reads. Read configura-  
tion register bit 10 (RCR.10, WT) determines its polarity when asserted. This signal's active  
output is VOL or VOH when CE# and OE# are VIL. WAIT is High-Z if CE# or OE# is VIH.  
• In synchronous array or non-array read modes, this signal indicates invalid data when as-  
serted and valid data when de-asserted.  
• In asynchronous page mode, and all write modes, this signal is de-asserted.  
VCC  
Power  
Device core power supply: Core (logic) source voltage. Writes to the array are inhibited  
when VCC VLKO. Operations at invalid VCC voltages should not be attempted.  
VCCQ  
VSS  
Power  
Power  
Output power supply: Output-driver source voltage.  
Ground: Connect to system ground. Do not float any VSS connection.  
RFU  
Reserved for future use: Reserved by Micron for future device functionality and en-  
hancement. These should be treated in the same way as a DU signal.  
DU  
NC  
Do not use: Do not connect to any other signal, or power supply; must be left floating.  
No connect: No internal connection; can be driven or floated.  
PDF: 09005aef845667b3  
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2013 Micron Technology, Inc. All rights reserved.