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M25P40-VMN3Txx 参数 Datasheet PDF下载

M25P40-VMN3Txx图片预览
型号: M25P40-VMN3Txx
PDF下载: 下载PDF文件 查看货源
内容描述: 美光M25P40串行闪存的嵌入式存储器 [Micron M25P40 Serial Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 59 页 / 785 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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Micron M25P40 Serial Flash Embedded Memory
RELEASE from DEEP POWER-DOWN
RELEASE from DEEP POWER-DOWN
Once the device has entered DEEP POWER-DOWN mode, all commands are ignored ex-
cept RELEASE from DEEP POWER-DOWN and READ ELECTRONIC SIGNATURE. Exe-
cuting either of these commands takes the device out of the DEEP POWER-DOWN
mode.
The RELEASE from DEEP POWER-DOWN command is entered by driving chip select
(S#) LOW, followed by the command code on serial data input (DQ0). S# must be driven
LOW for the entire duration of the sequence.
The RELEASE from DEEP POWER-DOWN command is terminated by driving S# HIGH.
Sending additional clock cycles on serial clock C while S# is driven LOW causes the
command to be rejected and not executed.
After S# has been driven HIGH, followed by a delay, t
RES
, the device is put in the STAND-
BY mode. S# must remain HIGH at least until this period is over. The device waits to be
selected so that it can receive, decode, and execute commands.
Any RELEASE from DEEP POWER-DOWN command issued while an ERASE, PRO-
GRAM, or WRITE cycle is in progress is rejected without any effect on the cycle that is in
progress.
Figure 19: RELEASE from DEEP POWER-DOWN Command Sequence
0
C
7
LSB
DQ0
MSB
DQ1
High-Z
Command
t
RDP
Deep Power-Down Mode
Standby Mode
Don’t Care
PDF: 09005aef8456654f
m25p40.pdf - Rev. Y 8/12 EN
32
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2011 Micron Technology, Inc. All rights reserved.