Micron M25P40 Serial Flash Embedded Memory
Power-Up Timing and Write Inhibit Voltage Specifications
Power-Up Timing and Write Inhibit Voltage Specifications
Table 8: Power-Up Timing and V
WI
Threshold
Symbol
t
VSL
t
PUW
V
WI
V
WI
Note:
Parameter
V
CC
(min) to S# LOW
Time delay to write instruction
Write Inhibit voltage (device grade 3)
Write Inhibit voltage (device grade 6)
Min
10
1.0
1.0
1.0
Max
–
10
2.1
2.1
Unit
μs
ms
V
V
1. Parameters are characterized only.
If the time, t
VSL
, has elapsed, after V
CC
rises above V
CC
(min), the device can be selected
for READ instructions even if the t
PUW
delay has not yet fully elapsed.
V
PPH
must be applied only when V
CC
is stable and in the V
CC
min to V
CC
max voltage
range.
PDF: 09005aef8456654f
m25p40.pdf - Rev. Y 8/12 EN
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