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M25P40-VMN3Txx 参数 Datasheet PDF下载

M25P40-VMN3Txx图片预览
型号: M25P40-VMN3Txx
PDF下载: 下载PDF文件 查看货源
内容描述: 美光M25P40串行闪存的嵌入式存储器 [Micron M25P40 Serial Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 59 页 / 785 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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Micron M25P40 Serial Flash Embedded Memory
AC Characteristics
Table 19: Instruction Times, Process Technology 110nm
Symbol
t
W
t
PP
t
PP
t
SE
t
BE
Parameter
WRITE STATUS REGISTER cycle time
PAGE PROGRAM cycle time (256 bytes)
PAGE PROGRAM cycle time (n bytes)
SECTOR ERASE cycle time
BULK ERASE cycle time
Notes:
Min
Typ
1.3
0.8
int (n/8) x
0.025
0.6
4.5
3
10
s
s
Max
15
5
Units
ms
ms
Notes
1. Applies to the entire table: 110nm technology devices are identified by the process iden-
tification digit
4
in the device marking and the process letter
B
in the part number.
2. When using the PAGE PROGRAM command to program consecutive bytes, optimized
timings are obtained in one sequence that includes all the bytes rather than in several
sequences of only a few bytes (1 < n < 256).
Table 20: Instruction Times, Process Technology 150nm
Symbol
t
W
t
PP
t
PP
t
SE
t
BE
Parameter
WRITE STATUS REGISTER cycle time
PAGE PROGRAM cycle time (256 bytes)
PAGE PROGRAM cycle time (n bytes)
SECTOR ERASE cycle time
BULK ERASE cycle time
Notes:
Min
Typ
5
1.4
0.4+n*1/256
1.0
4.5
3
10
s
s
Max
15
5
Units
ms
ms
Notes
1. Applies to the entire table: 150nm technology devices are identified by the process iden-
tification digit
4
in the device marking and the process letter
B
in the part number.
2. When using the PAGE PROGRAM command to program consecutive bytes, optimized
timings are obtained in one sequence that includes all the bytes rather than in several
sequences of only a few bytes (1 < n < 256).
Table 21: AC Specifications (25 MHz, Device Grade 3, V
CC
[min]=2.7V)
Symbol
f
C
f
R
t
CH
t
CL
t
CLCH
t
CHCL
t
SLCH
t
CHSL
t
DVCH
t
CHDX
t
CHSH
t
SHCH
Alt.
f
C
t
CLH
t
CLL
t
CSS
t
DSU
t
DH
Parameter
Clock frequency for commands (See note)
Clock frequency for READ command
Clock HIGH time
Clock LOW time
Clock rise time (peak to peak)
Clock fall time (peak to peak)
S# active setup time (relative to C)
S# not active hold time (relative to C)
Data in setup time
Data in hold time
S# active hold time (relative to C)
S# not active setup time (relative to C)
Min
D.C.
D.C.
18
18
0.1
0.1
10
10
5
5
10
10
Typ
Max
25
20
Unit
MHz
MHz
ns
ns
V/ns
V/ns
ns
ns
ns
ns
ns
ns
Notes
PDF: 09005aef8456654f
m25p40.pdf - Rev. Y 8/12 EN
41
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2011 Micron Technology, Inc. All rights reserved.