8GB (x72, ECC, DR) 240-Pin DDR3 VLP RDIMM
Features
Table 2: Addressing
Parameter
8GB
8K
Refresh count
Row address
64K A[15:0]
8 BA[2:0]
Device bank address
Device configuration
Column address
Module rank address
4Gb (512 Meg x 8)
1K A[9:0]
2 S#[1:0]
Table 3: Part Numbers and Timing Parameters – 8GB Modules
Base device: MT41J512M8,1 4Gb DDR3 SDRAM
Module
Density
Module
Memory Clock/
Data Rate
Clock Cycles
(CL-tRCD-tRP)
Part Number2
Configuration
1 Gig x 72
Bandwidth
14.9 GB/s
12.8 GB/s
10.6 GB/s
8.5 GB/s
MT18JDF1G72PDZ-1G9__
MT18JDF1G72PDZ-1G6__
MT18JDF1G72PDZ-1G4__
MT18JDF1G72PDZ-1G1__
8GB
8GB
8GB
8GB
1.07ns/1866 MT/s
1.25ns/1600 MT/s
1.5ns/1333 MT/s
1.87ns/1066 MT/s
13-13-13
11-11-11
9-9-9
1 Gig x 72
1 Gig x 72
1 Gig x 72
7-7-7
1. The data sheet for the base device can be found on Micron’s Web site.
Notes:
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con-
sult factory for current revision codes. Example: MT18JDF1G72PDZ-1G6J1.
PDF: 09005aef8482a8a7
jdf18c1gx72pdz.pdf – Rev. D 12/12 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
© 2011 Micron Technology, Inc. All rights reserved.
MICRON [ MICRON TECHNOLOGY ]
