4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
TRUTH TABLE (MT28F004B3)
1
FUNCTION
Standby
RESET
READ
READ
Output Disable
ERASE SETUP
ERASE CONFIRM
3
WRITE SETUP
WRITE
4
READ ARRAY
5
WRITE/ERASE (BOOT BLOCK)
2, 7
ERASE SETUP
ERASE CONFIRM
3
ERASE CONFIRM
3, 6
WRITE SETUP
WRITE
4
WRITE
4, 6
READ ARRAY
5
DEVICE IDENTIFICATION
8, 9
Manufacturer Compatibility
Device (top boot)
Device (bottom boot)
NOTE:
1.
2.
3.
4.
5.
6.
7.
8.
9.
RP#
H
L
H
H
H
H
H
H
H
H
V
HH
H
H
V
HH
H
H
H
H
H
CE#
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
OE#
X
X
L
H
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
WE#
X
X
H
H
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
WP#
X
X
X
X
X
X
X
X
X
X
X
H
X
X
H
X
X
X
X
A0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
H
H
A9
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
V
ID
V
ID
V
ID
V
PP
X
X
X
X
X
V
PPH
X
V
PPH
X
X
V
PPH
V
PPH
X
V
PPH
V
PPH
X
X
X
X
DQ0–DQ7
High-Z
High-Z
Data-Out
High-Z
20h
D0h
10h/40h
Data-In
FFh
20h
D0h
D0h
10h/40h
Data-In
Data-In
FFh
89h
78h
79h
WRITE/ERASE (EXCEPT BOOT BLOCK)
2
L = V
IL
, H = V
IH
, X = V
IL
or V
IH
.
V
PPH
= V
PPH1
= 3.3V or V
PPH2
= 5V.
Operation must be preceded by ERASE SETUP command.
Operation must be preceded by WRITE SETUP command.
The READ ARRAY command must be issued before reading the array after writing or erasing.
When WP# = V
IH
, RP# may be at V
IH
or V
HH
.
V
HH
= 12V.
V
ID
= 12V; may also be read by issuing the IDENTIFY DEVICE command.
A1–A8, A10–A18 = V
IL
.
4Mb Smart 3 Boot Block Flash Memory
F45_3.p65 – Rev. 3, Pub. 12/01
6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
MICRON [ MICRON TECHNOLOGY ]
