8Mb
SMART 3 BOOT BLOCK FLASH MEMORY
scribes both types of inputs. More information describ-
ing how to use the two types of inputs to write or erase
the device is provided in the Command Execution sec-
tion.
COMMANDS
To perform a command input, OE# must be HIGH,
and CE# and WE# must be LOW. Addresses are “Don’t
Care” but must be held stable, except during an ERASE
CONFIRM (described in a later section). The 8-bit com-
mand is input on DQ0–DQ7, while DQ8–DQ15 are “Don’t
Care” on the MT28F800B3. The command is latched on
the rising edge of CE# (CE#-controlled) or WE# (WE#-
controlled), whichever occurs first. The condition of
BYTE# on the MT28F800B3 has no effect on a com-
mand input.
MEMORY ARRAY
A WRITE to the memory array sets the desired bits to
logic 0s but cannot change a given bit to a logic 1 from a
logic 0. Setting any bits to a logic 1 requires that the entire
block be erased. To perform a WRITE, OE# must be HIGH,
CE# and WE# must be LOW, and V
PP
must be set to V
PPH
1
or V
PPH
2
. Writing to the boot block also requires that the
RP# pin be at V
HH
or WP# be HIGH. A0–A18 (A19) pro-
vide the address to be written, while the data to be
written to the array is input on the DQ pins. The data
and addresses are latched on the rising edge of CE#
(CE#-controlled) or WE# (WE#-controlled), whichever
occurs first. A WRITE must be preceded by a WRITE
SETUP command. Details on how to input data to the
array are described in the Write Sequence section.
Selectable bus sizing applies to WRITEs as it does to
READs on the MT28F800B3. When BYTE# is LOW (byte
mode), data is input on DQ0–DQ7, DQ8–DQ14 are High-
Z, and DQ15 becomes the lowest order address input.
When BYTE# is HIGH (word mode), data is input on DQ0–
DQ15.
COMMAND SET
To simplify writing of the memory blocks, the
MT28F800B3 and MT28F008B3 incorporate an ISM that
controls all internal algorithms for writing and erasing
the floating gate memory cells. An 8-bit command set is
used to control the device. Details on how to sequence
commands are provided in the Command Execution
section. Table 1 lists the valid commands.
Table 1
Command Set
COMMAND
RESERVED
HEX CODE DESCRIPTION
00h
This command and all unlisted commands are invalid and should not
be called. These commands are reserved to allow for future feature
enhancements.
Must be issued after any other command cycle before the array can be
read. It is not necessary to issue this command after power-up or RESET.
Allows the device and manufacturer compatibility ID to be read. A0 is
used to decode between the manufacturer compatibility ID (A0 = LOW)
and device ID (A0 = HIGH).
Allows the status register to be read. Please refer to Table 2 for more
information on the status register bits.
Clears status register bits 3-5, which cannot be cleared by the ISM.
The first command given in the two-cycle ERASE sequence. The ERASE is
not completed unless followed by ERASE CONFIRM.
The second command given in the two-cycle ERASE sequence. Must follow
an ERASE SETUP command to be valid. Also used during an ERASE
SUSPEND to resume the ERASE.
The first command given in the two-cycle WRITE sequence. The write
data and address are given in the following cycle to complete the WRITE.
Requests a halt of the ERASE and puts the device into the erase suspend
mode. When the device is in this mode, only READ STATUS REGISTER,
READ ARRAY and ERASE RESUME commands may be executed.
READ ARRAY
IDENTIFY DEVICE
FFh
90h
READ STATUS REGISTER
CLEAR STATUS REGISTER
ERASE SETUP
ERASE CONFIRM/RESUME
70h
50h
20h
D0h
WRITE SETUP
ERASE SUSPEND
40h or
10h
B0h
8Mb Smart 3 Boot Block Flash Memory
Q10_3.p65 – Rev. 3, Pub. 10/01
10
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
MICRON [ MICRON TECHNOLOGY ]
