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Advance
32Gb, 64Gb, 128Gb Asynchronous/Synchronous NAND
Features
Part Numbering Information
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Figure 1: Part Numbering
MT 29F 32G 08
Micron Technology
NAND Flash
Density
29F = NAND Flash memory
C
B
A
C
A
WP
ES
:C
Design Revision
C = Third revision
Production Status
Blank = Production
ES = Engineering sample
32G = 32Gb
64G = 64Gb
128G = 128Gb
Reserved for Future Use
Blank
Blank = Commercial (0°C to +70°C)
IT = Industrial (–40°C to +85°C)
08 = 8 bits
Level
Bit/Cell
C
2-bit
Speed Grade (synchronous mode only)
10 = 200 MT/s
Classification
Die # of CE# # of R/B# I/O
B
E
F
X
1
2
2
4
1
2
2
4
1
2
2
2
Common
Separate
Common
Separate
Package Code
D1 = 52-pad VLGA 11mm x 14mm x 0.9mm
1
H1 = 100-ball VBGA 12mm x 18mm x 1.0mm
1
WP = 48-pin TSOP
1
(CPL)
Interface
A = Async only
B = Sync/Async
Operating Voltage Range
Generation Feature Set
A = V
CC
: 3.3V (2.7–3.6V), V
CCQ
: 3.3V (2.7–3.6V)
C = V
CC
: 3.3V (2.7–3.6V), V
CCQ
: 1.8V (1.7–1.95V)
C = Third set of device features
Note:
1. Pb-free package.
PDF: 09005aef83f64350
l73a_32g_64g_128g_asyncsync_nand.pdf – Rev. A 3/10 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2010 Micron Technology, Inc. All rights reserved.
Draft 03/25/10
Device Width
Operating Temperature Range
MICRON [ MICRON TECHNOLOGY ]
