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MT41J256M4 参数 Datasheet PDF下载

MT41J256M4图片预览
型号: MT41J256M4
PDF下载: 下载PDF文件 查看货源
内容描述: DDR3 SDRAM MT41J256M4 â ????梅格32 ×4× 8银行MT41J128M8 â ????梅格16 ×8× 8银行MT41J64M16 â ???? 8梅格×16× 8银行 [DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 214 页 / 2938 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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1Gb: x4, x8, x16 DDR3 SDRAM
Features
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REFRESH to Power-Down Entry .................................................................................................. 188
ACTIVATE to Power-Down Entry ................................................................................................. 189
PRECHARGE to Power-Down Entry ............................................................................................. 189
MRS Command to Power-Down Entry ......................................................................................... 190
Power-Down Exit to Refresh to Power-Down Entry ....................................................................... 190
RESET Sequence ......................................................................................................................... 192
On-Die Termination ................................................................................................................... 193
Dynamic ODT: ODT Asserted Before and After the WRITE, BC4 .................................................... 198
Dynamic ODT: Without WRITE Command .................................................................................. 198
Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8 ............ 199
Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4 .......................... 200
Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4 .......................... 200
Synchronous ODT ...................................................................................................................... 202
Synchronous ODT (BC4) ............................................................................................................. 203
ODT During READs .................................................................................................................... 205
Asynchronous ODT Timing with Fast ODT Transition .................................................................. 207
Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry ............ 209
Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit ............... 211
Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping ..................... 213
Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping ................... 213
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
2006 Micron Technology, Inc. All rights reserved.