PRELIMINARY
256Mb: x4, x8, x16
DDR333 SDRAM Addendum
PIN DESCRIPTIONS (continued)
BALL / PIN NUMBERS
FBGA
TSOP
A8, B9, B7
C9, C7, D9
D7, E9, E1
D3, D1, C3
C1, B3, B1,
A2
A8, B7, C7,
D7, D3, C3,
B3, A2
B7, D7, D3,
B3
E3
E7, E3
2, 4, 5,
7, 8, 10
11, 13, 54
56, 57, 59
60, 62, 63,
65
2, 5, 8,
11, 56, 59
62, 65
5, 11, 56
62
51
16, 51
SYMBOL
DQ0-2
DQ3-5
DQ6-8
DQ9-11
DQ12-14
DQ15
DQ0-2
DQ3-5
DQ6-7
DQ0-2
DQ2
DQS
LDQS, UDQS
TYPE
I/O
DESCRIPTION
Data Input/Output: Data bus for
x16
I/O
Data Input/Output: Data bus for
x8
I/O
I/O
Data Input/Output: Data bus for
x4
Data Strobe: Output with read data, input with write data. DQS is
edge-aligned with read data, centered in write data. It is used to
capture data. For the x16 , LDQS is DQS for DQ0-DQ7 and UDQS
IS DQS for DQ8-DQ15. Pin 16 (H7) is NC on x4 and x8.
No Connect: These pins should be left unconnected.
Do Not Use: Must float to minimize noise on Vref
DQ Power Supply: +2.5V ±0.2V. Isolated on the die for improved
noise immunity.
DQ Ground. Isolated on the die for improved noise immunity.
Power Supply: +2.5V ±0.2V.
Ground.
SSTL_2 reference voltage.
Address input A13 for 1Gb devices.
14, 17, 25,
43, 53
19, 50
B2, D2, C8, 3, 9, 15, 55,
E8, A9
61
A1, C2, E2, 6, 12, 52,
B8, D8
58, 64
F8, M7, A7
A1, A3, F2,
M3
F1
F9
49
17
1, 18, 33
34, 48, 66
NC
DNU
V
DD
Q
V
SS
Q
V
DD
V
SS
V
REF
A13
-
–
Supply
Supply
Supply
Supply
Supply
I
256Mb: x4, x8, x16 DDR333 SDRAM
256Mx4x8x16DDR333_B.p65 – Rev. B; Pub. 10/01
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
MICRON [ MICRON TECHNOLOGY ]
