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MT46V64M4TG-75Z 参数 Datasheet PDF下载

MT46V64M4TG-75Z图片预览
型号: MT46V64M4TG-75Z
PDF下载: 下载PDF文件 查看货源
内容描述: 双倍数据速率DDR SDRAM [DOUBLE DATA RATE DDR SDRAM]
分类和应用: 内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 8 页 / 152 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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PRELIMINARY
256Mb: x4, x8, x16
DDR333 SDRAM Addendum
GENERAL DESCRIPTION
The DDR333 SDRAM is a high-speed CMOS, dy-
namic random-access memory that operates at a fre-
quency of 167 MHz (
t
CK=6ns) with a peak data trans-
fer rate of 333Mb/s/p. DDR333 continues to use the
JEDEC standard SSTL_2 interface and the
2n-prefetch
architecture.
The standard DDR200/DDR266 data sheets also
pertain to the DDR333 device and should be referenced
for a complete description of DDR SDRAM function-
ality and operating modes. However, to meet the faster
DDR333 operating frequencies, some of the AC timing
parameters are slightly tighter. This addendum data
sheet will concentrate on the key differences required
to support the enhanced speeds.
In addition to the standard 66-pin TSOP package,
a 60-ball FBGA package is utilized for DDR333. This
JEDEC-defined package promotes better package para-
sitic parameters and a smaller footprint.
CAPACITANCE (FBGA)
(Notes: 1-5, 14-17, 33; notes appear in DDR200/266 data sheets)
(0°C
T
A
70°C; V
DD
Q = +2.5V ±0.2V, V
DD
= +2.5V ±0.2V)
PARAMETER
Delta Input/Output Capacitance:
DQs, DQS, DM (for x4 or x8 devices)
DQ0-DQ7, LDQS, LDM (for lower byte of x16 devices),
DQ8-DQ15, UDQS, UDM (for upper byte of x16 devices)
Delta Input Capacitance: Command and Address
Delta Input Capacitance: CK, CK#
Input/Output Capacitance: DQs, DQS, DM (LDQS, LDM, UDM)
Input Capacitance: Command and Address
Input Capacitance: CK, CK#
Input Capacitance: CKE
DC
IO
DC
IO
DC
IO
DC
I
1
DC
I
2
C
IO
C
I
1
C
I
2
C
I
3
3.50
1.50
1.50
1.50
0.50
0.50
0.50
0.50
0.25
4.00
2.50
2.50
2.50
pF
pF
pF
pF
pF
pF
pF
pF
pF
13, 24
13, 24
13, 29
13, 29
13, 29
13
13
13
13
SYMBOL
MIN
MAX
UNITS
NOTES
CAPACITANCE (TSOP)
(Notes: 1-5, 14-17, 33; notes appear in DDR200/266 data sheets)
(0°C
T
A
70°C; V
DD
Q = +2.5V ±0.2V, V
DD
= +2.5V ±0.2V)
PARAMETER
Delta Input/Output Capacitance:
DQs, DQS, DM (for x4 or x8 devices)
DQ0-DQ7, LDQS, LDM (for lower byte of x16 devices),
DQ8-DQ15, UDQS, UDM (for upper byte of x16 devices)
Delta Input Capacitance: Command and Address
Delta Input Capacitance: CK, CK#
Input/Output Capacitance: DQs, DQS, DM (LDQS, LDM, UDM)
Input Capacitance: Command and Address
Input Capacitance: CK, CK#
Input Capacitance: CKE
DC
IO
DC
IO
DC
IO
DC
I
1
DC
I
2
C
IO
C
I
1
C
I
2
C
I
3
4.0
2.0
2.0
2.0
0.50
0.50
0.50
0.50
0.25
5.0
3.0
3.0
3.0
pF
pF
pF
pF
pF
pF
pF
pF
pF
13, 24
13, 24
13, 24
13, 29
13, 29
13
13
13
13
SYMBOL
MIN
MAX
UNITS
NOTES
256Mb: x4, x8, x16 DDR333 SDRAM
256Mx4x8x16DDR333_B.p65 – Rev. B; Pub. 10/01
6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.