512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Operations
Figure 9:
Activating a Specific Row in a Specific Bank
CLK
CKE
CS#
HIGH
RAS#
CAS#
WE#
A0–A12
ROW
ADDRESS
BA0, BA1
BANK
ADDRESS
DON´T
CARE
Figure 10:
Example: Meeting
t
RCD (MIN) When 2 <
t
RCD (MIN)/
t
CK < 3
T0
CLK
t
CK
COMMAND
ACTIVE
NOP
tRCD (MIN)
t
CK
NOP
t
CK
READ or
WRITE
T1
T2
T3
DON’T
CARE
READs
READ bursts are initiated with a READ command, as shown in Figure 11.
The starting column and bank addresses are provided with the READ command, and
auto precharge is either enabled or disabled for that burst access. If auto precharge is
enabled, the row being accessed is precharged at the completion of the burst. For the
generic READ commands used in the following illustrations, auto precharge is disabled.
During READ bursts, the valid data-out element from the starting column address will
be available following the CL after the READ command. Each subsequent data-out
element will be valid by the next positive clock edge. Figure 12 on page 25 shows general
timing for each possible CL setting.
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. H 6/07 EN
23
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