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MT48H16M32LGCM-75L 参数 Datasheet PDF下载

MT48H16M32LGCM-75L图片预览
型号: MT48H16M32LGCM-75L
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB :梅格32 ×16 , 16兆×32移动SDRAM [512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM]
分类和应用: 内存集成电路动态存储器时钟
文件页数/大小: 73 页 / 2407 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT48H16M32LGCM-75L的Datasheet PDF文件第41页浏览型号MT48H16M32LGCM-75L的Datasheet PDF文件第42页浏览型号MT48H16M32LGCM-75L的Datasheet PDF文件第43页浏览型号MT48H16M32LGCM-75L的Datasheet PDF文件第44页浏览型号MT48H16M32LGCM-75L的Datasheet PDF文件第46页浏览型号MT48H16M32LGCM-75L的Datasheet PDF文件第47页浏览型号MT48H16M32LGCM-75L的Datasheet PDF文件第48页浏览型号MT48H16M32LGCM-75L的Datasheet PDF文件第49页  
512Mb : 32 Me g x 16, 16 Me g x 32 Mo b ile SDRAM  
Tru t h Ta b le s  
5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank  
represented by the current state only.  
6. All states and sequences not shown are illegal or reserved.  
7. READs or WRITEs to bank m listed in the Command (Action) column include READs or  
WRITEs with auto precharge enabled and READs or WRITEs with auto precharge disabled.  
8. For a READ without auto precharge interrupted by a READ (with or without auto pre-  
charge), the READ to bank m will interrupt the READ on bank n, CL later (Figure 11 on  
page 24).  
9. For a READ without auto precharge interrupted by a WRITE (with or without auto pre-  
charge), the WRITE to bank m will interrupt the READ on bank n when registered. DQM  
should be used one clock prior to the WRITE command to prevent bus contention.  
10. Burst in bank n continues as initiated.  
11. For a WRITE without auto precharge interrupted by a READ (with or without auto pre-  
charge), the READ to bank m will interrupt the WRITE on bank n when registered, with the  
data-out appearing CL later. The last valid WRITE to bank n will be data-in registered one  
clock prior to the READ to bank m.  
12. For a WRITE without auto precharge interrupted by a WRITE (with or without auto pre-  
charge), the WRITE to bank will interrupt the WRITE on bank n when registered. The last  
valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m.  
13. Concurrent auto precharge: Bank n will initiate the auto precharge command when its  
burst has been interrupted by bank m burst.  
14. For a READ with auto precharge interrupted by a READ (with or without auto precharge),  
the READ to bank m will interrupt the READ on bank n, CL later. The PRECHARGE to bank n  
will begin when the READ to bank m is registered.  
15. For a READ with auto precharge interrupted by a WRITE (with or without auto precharge),  
the WRITE to bank m will interrupt the READ on bank n when registered. DQM should be  
used two clocks prior to the WRITE command to prevent bus contention. The PRECHARGE  
to bank n will begin when the WRITE to bank m is registered.  
16. For a WRITE with auto precharge interrupted by a READ (with or without auto precharge),  
the READ to bank m will interrupt the WRITE on bank n when registered, with the data-out  
t
t
appearing CL later. The PRECHARGE to bank n will begin after WR is met, where WR  
begins when the READ to bank m is registered. The last valid WRITE bank n will be data-in  
registered one clock prior to the READ to bank m.  
17. For a WRITE with auto precharge interrupted by a WRITE (with or without auto precharge),  
the WRITE to bank m interrupt the WRITE on bank n when registered. The PRECHARGE to  
t
t
bank n will begin after WR is met, where WR begins when the WRITE to bank m is regis-  
tered. The last valid WRITE to bank n will be data registered one clock to the WRITE to  
bank m.  
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03  
MT48H32M16LF_1.fm - Rev. H 6/07 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
45  
©2005 Micron Technology, Inc. All rights reserved.