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MT48H16M32LFCM-75 参数 Datasheet PDF下载

MT48H16M32LFCM-75图片预览
型号: MT48H16M32LFCM-75
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB :梅格32 ×16 , 16兆×32移动SDRAM [512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM]
分类和应用: 动态存储器
文件页数/大小: 73 页 / 2407 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Register Definition
Extended Mode Register (EMR)
The EMR controls the functions beyond those controlled by the mode register. These
additional functions are special features of the mobile device that helps reduce overall
system power consumption. They include temperature-compensated self refresh
(TCSR) control, partial-array self refresh (PASR), and output drive strength.
The EMR is programmed via the MODE REGISTER SET command (BA1 = 1, BA0 = 0) and
retains the stored information until it is programmed again or the device loses power.
Figure 7:
CAS Latency
T0
CLK
COMMAND
T1
T2
T3
READ
NOP
tLZ
NOP
tOH
D
OUT
tAC
DQ
CL
= 2
T0
CLK
COMMAND
T1
T2
T3
T4
READ
NOP
NOP
tLZ
NOP
tOH
D
OUT
tAC
DQ
CL
= 3
DON’T
CARE
UNDEFINED
Notes:
1. Each READ command may be to any bank. DQM is LOW.
2. For CL = 2, DQM should be taken LOW at READ command. For CL = 3, DQM should be taken
LOW one cycle after the READ command.
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. H 6/07 EN
16
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.