16Mb: 1 MEG x16
EDO DRAM
AC ELECTRICAL CHARACTERISTICS (continued)
(Notes: 2, 3, 9, 10, 11, 12; notes appear on pages 10-11); (V
CC
[MIN]
£
V
CC
£
V
CC
[MAX])
AC CHARACTERISTICS
PARAMETER
OE# setup prior to RAS#
during HIDDEN REFRESH cycle
EDO-PAGE-MODE READ or WRITE cycle time
EDO-PAGE-MODE READ-WRITE cycle time
Access time from RAS#
RAS# to column-address delay time
Row address hold time
RAS# pulse width
RAS# pulse width (EDO PAGE MODE)
RAS# pulse width during Self Refresh
Random READ or WRITE cycle time
RAS# to CAS# delay time
READ command hold time (referenced to CAS#)
READ command setup time
Refresh period (1,024 cycles)
Refresh period (1,024 cycles) S version
RAS# precharge time
RAS# to CAS# precharge time
RAS# precharge time exiting Self Refresh
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
Output disable delay from WE#
WRITE command pulse width
WE# pulse to disable at CAS# HIGH
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
-5
SYMBOL
t
ORD
t
PC
t
PRWC
t
RAC
t
RAD
t
RAH
t
RAS
t
RASP
t
RASS
t
RC
t
RCD
t
RCH
t
RCS
t
REF
t
REF
t
RP
t
RPC
t
RPS
t
RRH
t
RSH
t
RWC
t
RWD
t
RWL
t
T
t
WCH
t
WCR
t
WCS
t
WHZ
t
WP
t
WPZ
t
WRH
t
WRP
-6
MAX
MIN
0
25
56
50
60
12
10
60
60
100
104
14
0
0
MAX
UNITS NOTES
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
31
31
19
21
MIN
0
20
47
9
9
50
50
100
84
11
0
0
10,000
125,000
10,000
125,000
22, 25
23, 27
25
16
128
30
5
90
0
13
116
67
13
2
8
38
0
0
5
10
8
8
40
5
105
0
15
140
79
15
2
10
45
0
0
5
10
10
10
16
128
23
32
13
50
50
32
13, 25
12
15
1 Meg x 16 EDO DRAM
D52_B.p65 – Rev. B; Pub. 3/01
9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc
MICRON [ MICRON TECHNOLOGY ]
