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MT4LC1M16E5DJ-5S 参数 Datasheet PDF下载

MT4LC1M16E5DJ-5S图片预览
型号: MT4LC1M16E5DJ-5S
PDF下载: 下载PDF文件 查看货源
内容描述: EDO DRAM [EDO DRAM]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 24 页 / 384 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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16Mb: 1 MEG x16
EDO DRAM
CAPACITANCE
(Notes: 1, 2, 3, 5, 8; notes appear on pages 10-11)
PARAMETER
Input Capacitance: Addresses
Input Capacitance: RAS#, CASL#,CASH#, WE#, OE#
Input/Output Capacitance: DQ
SYMBOL MAX UNITS NOTES
C
I
1
C
I
2
C
IO
5
7
7
pF
pF
pF
AC ELECTRICAL CHARACTERISTICS
(Notes: 2, 3, 9, 10, 11, 12; notes appear on pages 10-11); (V
CC
[MIN]
£
V
CC
£
V
CC
[MAX])
AC CHARACTERISTICS
PARAMETER
Access time from column address
Column-address setup to CAS# precharge
Column-address hold time (referenced to RAS#)
Column-address setup time
Row-address setup time
Column address to WE# delay time
Access time from CAS#
Column-address hold time
CAS# pulse width
CAS# LOW to “Don’t Care” during Self Refresh
CAS# hold time (CBR Refresh)
Last CAS# going LOW to first CAS# to return HIGH
CAS# to output in Low-Z
Data output hold after next CAS# LOW
CAS# precharge time
Access time from CAS# precharge
CAS# to RAS# precharge time
CAS# hold time
CAS# setup time (CBR Refresh)
CAS# to WE# delay time
WRITE command to CAS# lead time
Data-in hold time
Data-in setup time
Output disable
Output enable
OE# hold time from WE# during
READ-MODIFY-WRITE cycle
OE# HIGH hold from CAS# HIGH
OE# HIGH pulse width
OE# LOW to CAS# HIGH setup time
Output buffer turn-off delay
-5
SYMBOL
t
AA
t
ACH
t
AR
t
ASC
t
ASR
t
AWD
t
CAC
t
CAH
t
CAS
t
CHD
t
CHR
t
CLCH
t
CLZ
t
COH
t
CP
t
CPA
t
CRP
t
CSH
t
CSR
t
CWD
t
CWL
t
DH
t
DS
t
OD
t
OE
t
OEH
t
OEHC
t
OEP
t
OES
t
OFF
-6
MAX
25
MIN
15
45
0
0
49
13
15
10
10
15
10
5
0
3
10
5
45
5
35
10
10
0
0
10
10
5
5
0
10,000
MAX
30
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
MIN
12
38
0
0
42
8
8
15
8
5
0
3
8
5
38
5
28
8
8
0
0
8
5
5
4
0
10,000
25
25
13
14, 25
25
27
7, 26
28
26
15, 30
26
26
26
7, 25
13, 25
26
16, 25
16, 25
17
18
18
28
35
12
12
15
15
12
15
20, 26
1 Meg x 16 EDO DRAM
D52_B.p65 – Rev. B; Pub. 3/01
8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc