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N25Q512A13GF840E 参数 Datasheet PDF下载

N25Q512A13GF840E图片预览
型号: N25Q512A13GF840E
PDF下载: 下载PDF文件 查看货源
内容描述: 美光的串行NOR闪存3V ,多个I / O, 4KB扇区擦除N25Q512A [Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A]
分类和应用: 闪存
文件页数/大小: 91 页 / 1214 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, Multiple I/O Serial Flash Memory  
Command Definitions  
14. Requires the READ FLAG STATUS REGISTER command being issued with at least one byte  
output. (After code, at least 8 clock pulses in extended SPI, 4 clock pulses in dual I/O SPI,  
and 2 clock pulses in quad I/O SPI.) The cycle is not complete until bit 7 of the flag status  
register outputs 1.  
15. The end of operation can be detected by means of a READ FLAG STATUS REGISTER com-  
mand being issued twice, S# toggled between command execution, and bit 7 of the flag  
status register outputs 1 both times.  
16. The WRITE ENABLE command must be issued first before this command can be execu-  
ted. Not necessary for part numbers N25Q512A83GSF40x and N25Q512A83G1240x.  
17. Only available for part numbers N25Q512A83GSF40x and N25Q512A83G1240x.  
18. The code 38h is valid only for part numbers N25Q512A83GSF40x and  
N25Q512A83G1240x; the code 12h is valid for the other part numbers.  
PDF: 09005aef84752721  
n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2011 Micron Technology, Inc. All rights reserved.