欢迎访问ic37.com |
会员登录 免费注册
发布采购

N25Q512A13GF840E 参数 Datasheet PDF下载

N25Q512A13GF840E图片预览
型号: N25Q512A13GF840E
PDF下载: 下载PDF文件 查看货源
内容描述: 美光的串行NOR闪存3V ,多个I / O, 4KB扇区擦除N25Q512A [Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A]
分类和应用: 闪存
文件页数/大小: 91 页 / 1214 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号N25Q512A13GF840E的Datasheet PDF文件第41页浏览型号N25Q512A13GF840E的Datasheet PDF文件第42页浏览型号N25Q512A13GF840E的Datasheet PDF文件第43页浏览型号N25Q512A13GF840E的Datasheet PDF文件第44页浏览型号N25Q512A13GF840E的Datasheet PDF文件第46页浏览型号N25Q512A13GF840E的Datasheet PDF文件第47页浏览型号N25Q512A13GF840E的Datasheet PDF文件第48页浏览型号N25Q512A13GF840E的Datasheet PDF文件第49页  
512Mb, Multiple I/O Serial Flash Memory  
READ MEMORY Operations  
Table 25: Command/Address/Data Lines for READ MEMORY Commands (Continued)  
Note 1 applies to entire table  
Command Name  
DUAL  
QUAD  
FAST  
DUAL OUTPUT INPUT/OUTPUT QUAD OUTPUT INPUT/OUTPUT  
READ  
READ  
FAST READ  
FAST READ  
FAST READ  
FAST READ  
STR Mode  
DTR Mode  
Data Output  
03  
0B  
0D  
3B  
3D  
BB  
BD  
6B  
EB  
6D  
ED  
DQ[3:0]  
DQ[3:0]  
DQ[3:0]  
1. Yes in the "Supported' row for each protocol indicates that the command in that col-  
umn is supported; when supported, a command's functionality is identical for the entire  
column regardless of the protocol. For example, a FAST READ functions the same for all  
three protocols even though its data is input/output differently depending on the pro-  
tocol.  
Notes:  
2. FAST READ is similar to READ, but requires dummy clock cycles following the address  
bytes and can operate at a higher frequency (fC).  
4-Byte Address  
To execute 4-byte READ MEMORY commands, S# is driven LOW. The command code is  
input on DQn, followed by input on DQn of four address bytes. Each address bit is  
latched in during the rising edge of the clock. The addressed byte can be at any location,  
and the address automatically increments to the next address after each byte of data is  
shifted out; therefore, a die can be read with a single command. The operation is termi-  
nated by driving S# HIGH at any time during data output.  
Table 26: Command/Address/Data Lines for READ MEMORY Commands – 4-Byte Address  
Notes 1 and 2 apply to entire table  
Command Name (4-Byte Address)  
DUAL  
QUAD  
FAST  
DUAL OUTPUT INPUT/OUTPUT QUAD OUTPUT INPUT/OUTPUT  
READ  
03/13  
READ  
FAST READ  
FAST READ  
FAST READ  
FAST READ  
STR Mode  
0B/0C  
0D  
3B/3C  
BB/BC  
6B/6C  
EB/EC  
DTR Mode  
3D  
BD  
6D  
ED  
Extended SPI Protocol  
Supported  
Yes  
Yes  
Yes  
DQ0  
Yes  
Yes  
DQ0  
Yes  
Command Input  
Address Input  
Data Output  
DQ0  
DQ0  
DQ1  
DQ0  
DQ0  
DQ1  
DQ0  
DQ0  
DQ0  
DQ[1:0]  
DQ[1:0]  
DQ0  
DQ[3:0]  
DQ[3:0]  
DQ[1:0]  
DQ[3:0]  
Dual SPI Protocol  
Supported  
No  
Yes  
Yes  
Yes  
No  
No  
Command Input  
Address Input  
Data Output  
DQ[1:0]  
DQ[1:0]  
DQ[1:0]  
DQ[1:0]  
DQ[1:0]  
DQ[1:0]  
DQ[1:0]  
DQ[1:0]  
DQ[1:0]  
PDF: 09005aef84752721  
n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
45  
© 2011 Micron Technology, Inc. All rights reserved.