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PC28F00BP30EFA 参数 Datasheet PDF下载

PC28F00BP30EFA图片预览
型号: PC28F00BP30EFA
PDF下载: 下载PDF文件 查看货源
内容描述: Numonyx® Axcellâ ?? ¢ P30-65nm闪存 [Numonyx® Axcell™ P30-65nm Flash Memory]
分类和应用: 闪存内存集成电路
文件页数/大小: 86 页 / 11765 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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P30-65nm  
4.0  
Signals  
Table 4:  
TSOP and Easy BGA Signal Descriptions (Sheet 1 of 2)  
Symbol  
Type  
Name and Function  
ADDRESS INPUTS: Device address inputs. 512-Mbit: A[25:1], 1-Gbit: A[26:1], 2-Gbit: A[27:1].  
A[MAX:1]  
DQ[15:0]  
Input  
Note: The virtual selection of the upper 1-Gbit die in the dual-die 2-Gbit configuration is  
accomplished by setting A27 high (V ).  
IH  
DATA INPUT/OUTPUTS: Inputs data and commands during write cycles; outputs data during  
reads of memory, Status Register, OTP Register, and Read Configuration Register. Data pins/balls  
float when the CE# or OE# are deasserted. Data is internally latched during writes.  
Input/  
Output  
ADDRESS VALID: Active low input.  
Easy BGA: During synchronous read operations, addresses are latched on the rising edge of ADV#,  
or on the next valid CLK edge with ADV# low, whichever occurs first. In asynchronous mode, ADV#  
can be either driven high to latch the address or held low throught the read cycle.  
ADV#  
Input  
TSOP: ADV# must be tied to VSS or held low throughout the read cycle.  
WARNING: Designs not using ADV# must tie it to VSS to allow addresses to flow through.  
CHIP ENABLE: Active low input. CE# low selects the associated flash memory die. When asserted,  
flash internal control logic, input buffers, decoders, and sense amplifiers are active. When  
deasserted, the associated flash die is deselected, power is reduced to standby levels, data and  
WAIT outputs are placed in high-Z state.  
CE#  
CLK  
Input  
Input  
WARNING: Chip Enable must be high when device is not in use.  
CLOCK: Synchronizes the device with the system’s bus frequency in synchronous-read mode.  
During synchronous read operations, addresses are latched on the rising edge of ADV#, or on the  
next valid CLK edge with ADV# low, whichever occurs first.  
WARNING: Designs not using CLK for synchronous read mode must tie it to VCCQ or VSS.  
OUTPUT ENABLE: Active low input. OE# low enables the device’s output data buffers during read  
OE#  
Input  
Input  
cycles. OE# high places the data outputs and WAIT in High-Z.  
RESET: Active low input. RST# resets internal automation and inhibits write operations. This  
provides data protection during power transitions. RST# high enables normal operation. Exit from  
reset places the device in asynchronous read array mode.  
RST#  
WAIT: Indicates data valid in synchronous array or non-array burst reads. RCR.10, (WT) determines  
its polarity when asserted. WAIT’s active output is V or V  
when CE# and OE# are V . WAIT is  
OL  
OH  
IL  
high-Z if CE# or OE# is V  
.
IH  
WAIT  
Output  
In synchronous array or non-array read modes, WAIT indicates invalid data when asserted and  
valid data when deasserted.  
In asynchronous page mode, and all write modes, WAIT is deasserted.  
WRITE ENABLE: Active low input. WE# controls writes to the device. Address and data are latched  
WE#  
WP#  
Input  
Input  
on the rising edge of WE#.  
WRITE PROTECT: Active low input. WP# low enables the lock-down mechanism. Blocks in lock-  
down cannot be unlocked with the Unlock command. WP# high overrides the lock-down function  
enabling blocks to be erased or programmed using software commands.  
ERASE AND PROGRAM POWER: A valid voltage on this pin allows erasing or programming.  
Memory contents cannot be altered when VPP V  
voltages should not be attempted.  
. Block erase and program at invalid VPP  
PPLK  
Set VPP = V  
for in-system program and erase operations. To accommodate resistor or diode drops  
PPL  
Power/  
Input  
VPP  
from the system supply, the V level of VPP can be as low as V  
min. VPP must remain above V  
IH  
PPL PPL  
min to perform in-system flash modification. VPP may be 0 V during read operations.  
V
can be applied to array blocks for 1000 cycles maximum. VPP can be connected to 9 V for a  
PPH  
cumulative total not to exceed 80 hours. Extended use of this pin at 9 V may reduce block cycling  
capability.  
DEVICE CORE POWER SUPPLY: Core (logic) source voltage. Writes to the flash array are inhibited  
VCC  
Power  
when VCC V  
. Operations at invalid VCC voltages should not be attempted.  
LKO  
VCCQ  
VSS  
Power  
Power  
OUTPUT POWER SUPPLY: Output-driver source voltage.  
GROUND: Connect to system ground. Do not float any VSS connection.  
Datasheet  
14  
Sept 2012  
Order Number: 208042-06