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PC28F128G18FE 参数 Datasheet PDF下载

PC28F128G18FE图片预览
型号: PC28F128G18FE
PDF下载: 下载PDF文件 查看货源
内容描述: 128MB, 256MB,512MB ,1GB的StrataFlash存储器 [128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory]
分类和应用: 存储
文件页数/大小: 118 页 / 1154 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
Electrical Specifications – DC Current and Voltage Characteris-
tics and Operating Conditions
Table 36: DC Voltage Characteristics and Operating Conditions
V
CCQ
=
1.7V - 2.0V
Parameter
Input low voltage
Input high voltage
Output low voltage
Output high voltage
V
PP
lockout voltage
V
CC
lock voltage
V
CCQ
lock voltage
Notes:
Symbol
V
IL
V
IH
V
OL
V
OH
V
PPLK
V
LKO
V
LKOQ
Conditions
V
CC
= V
CC,min
; V
CCQ
=
V
CCQ,min
; I
OL
= 100µA
V
CC
= V
CC,min
; V
CCQ
=
V
CCQ,min
; I
OL
= 100µA
Min
0
V
CCQ
-
0.45
V
CCQ
- 0.1
1.0
0.9
Max
0.45
V
CCQ
0.1
0.4
Unit
V
V
V
V
V
V
V
Notes
1. Input voltages can undershoot to –1.0V and overshoot to V
CCQ
+ 1V for durations of 2ns
or less.
2. V
PP
< V
PPLK
inhibits ERASE and PROGRAM operations. Do not use V
PPL
and V
PPH
outside
of their valid ranges.
PDF: 09005aef8448483a
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN
60
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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2011 Micron Technology, Inc. All rights reserved.