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PC28F512P30BF 参数 Datasheet PDF下载

PC28F512P30BF图片预览
型号: PC28F512P30BF
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 92 页 / 1225 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, 1Gb, 2Gb: P30-65nm  
AC Read Specifications  
Table 39: AC Read Specifications (Continued)  
Parameter  
Symbol  
tCLK  
tCLK  
tCH/CL  
tFCLK/RCLK  
Min  
Max  
Unit  
MHz  
ns  
Notes  
CLK frequency  
CLK period  
52  
1, 3, 5, 6  
19.2  
5
CLK HIGH/LOW time  
CLK fall/rise time  
ns  
0.3  
3
ns  
Synchronous Specifications (Easy BGA)5  
Address setup to CLK  
ADV# LOW setup to CLK  
CE# LOW setup to CLK  
CLK to output valid  
tAVCH/L  
tVLCH/L  
tELCH/L  
tCHQV /  
tCLQV  
9
9
9
ns  
ns  
ns  
ns  
1, 6  
17  
Output hold from CLK  
Address hold from CLK  
CLK to WAIT valid  
tCHQX  
tCHAX  
tCHTV  
tCHVL  
tCHTX  
3
10  
-
-
ns  
ns  
ns  
ns  
ns  
1, 6  
1, 4, 6  
1, 6  
1
17  
CLK valid to ADV# setup  
WAIT hold from CLK  
3
3
1, 6  
1. See AC Test Conditions for timing measurements and maximum allowable input slew  
rate.  
Notes:  
2. OE# may be delayed by up to tELQV – tGLQV after CE#’s falling edge without impact to  
tELQV.  
3. Sampled, not 100% tested.  
4. Address hold in synchronous burst mode is tCHAX or tVHAX, whichever timing specifica-  
tion is satisfied first.  
5. Synchronous read mode is not supported with TTL level inputs.  
6. Applies only to subsequent synchronous reads.  
PDF: 09005aef845667b3  
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
79  
© 2013 Micron Technology, Inc. All rights reserved.