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PF48F4000P0ZB 参数 Datasheet PDF下载

PF48F4000P0ZB图片预览
型号: PF48F4000P0ZB
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储
文件页数/大小: 98 页 / 1366 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb and 512Mb (256Mb/256Mb), P30-65nm
Features
Discrete and MCP Part Numbering Information
Devices are shipped from the factory with memory content bits erased to 1. For available options, such as pack-
ages or for further information, contact your Micron sales representative. Part numbers can be verified at
Feature and specification comparison by device type is available at
Con-
tact the factory for devices not found.
Note:
Not all part numbers listed here are available for ordering.
Table 1: Discrete Part Number Information
Part Number Category
Package
Category Details
JS = 56-lead TSOP, lead free
PC = 64-ball Easy BGA, lead-free
RC = 64-ball Easy BGA, leaded
Product Line
Density
Product Family
Parameter Location
Lithography
Features
Note:
28F = Micron Flash memory
256 = 256Mb
P30 (VCC = 1.7 to 2.0V; VCCQ = 1.7 to 3.6V)
B/T = Bottom/Top parameter
F = 65nm
*
1. The last digit is assigned randomly to cover packaging media, features, or other specific configuration infor-
mation. Sample part number: JS28F256P30BF*
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2013 Micron Technology, Inc. All rights reserved.