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RC28F00AP30BF 参数 Datasheet PDF下载

RC28F00AP30BF图片预览
型号: RC28F00AP30BF
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储
文件页数/大小: 92 页 / 1225 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, 1Gb, 2Gb: P30-65nm  
Device Command Bus Cycles  
3. The second cycle of the BUFFERED PROGRAM command is the word count of the data to  
be loaded into the write buffer. This is followed by up to 512 words of data. Then the  
CONFIRM command (0xD0) is issued, triggering the array programming operation.  
4. The CONFIRM command (0xD0) is followed by the buffer data.  
5. The second cycle is a Sub-Op-Code, the data written on third cycle is N-1; 1N 512.  
The subsequent cycles load data words into the program buffer at a specified address  
until word count is achieved, after the data words are loaded, the final cycle is the con-  
firm cycle 0xD0).  
PDF: 09005aef845667b3  
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2013 Micron Technology, Inc. All rights reserved.