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RC28F00AP30BF 参数 Datasheet PDF下载

RC28F00AP30BF图片预览
型号: RC28F00AP30BF
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储
文件页数/大小: 92 页 / 1225 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, 1Gb, 2Gb: P30-65nm
Device ID Codes
Device ID Codes
Table 9: Device ID codes
Device
Density
512Mb
1Gb
Note:
Device Identifier Codes
–T (Top Parameter)
8960
8962
–B (Bottom Parameter)
8961
8963
–E/F (Symmetrical Blocks)
8999
899A
ID Code Type
Device Code
1. The 2Gb devices do not have a unique device ID associated with them. Each die within
the stack can be identified by device ID codes.
PDF: 09005aef845667b3
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN
26
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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2013 Micron Technology, Inc. All rights reserved.