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RC28F00AP30BF 参数 Datasheet PDF下载

RC28F00AP30BF图片预览
型号: RC28F00AP30BF
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储
文件页数/大小: 92 页 / 1225 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, 1Gb, 2Gb: P30-65nm
Common Flash Interface
Table 25: One Time Programmable (OTP) Space Information (Continued)
Hex Offset
P = 10Ah
(P+13)h
(P+14)h
(P+15)h
(P+16)h
(P+17)h
(P+18)h
(P+19)h
Length
10
Description
Protection field 2: protection description
Bits 0 - 31 point to the protection register physi-
cal lock word address in the JEDEC plane.
The bytes that follow are factory or user-progam-
mable.
Bits 32 - 39 = n where n equals factory program-
med groups (low byte).
Bits 40 - 47 = n where n equals factory program-
med groups (high byte).
Bits 48 - 55 = n where 2n equals factory program-
med bytes/groups.
Bits 56 - 63 = n where n equals user programmed
groups (low byte).
Bits 64 - 71 = n where n equals user programmed
groups (high byte).
Bits 72 - 79 = n where 2
n
equals user programma-
ble bytes/groups.
Address
11D:
11E:
11F:
120:
121:
122:
123:
Hex
Code
- -89
- -00
- -00
- -00
- -00
- -00
- -00
ASCII Value
(DQ[7:0])
89h
00h
00h
00h
0
0
0
(P+1A)h
(P+1B)h
(P+1C)h
124:
125:
126:
- -10
- -00
- -04
16
0
16
Table 26: Burst Read Information
Hex Offset
P = 10Ah
Length
1
(P+1D)h
Description
Page Mode Read capability:
Bits 7 - 0 = n where 2
n
hex value represents the
number of read-page bytes. See offset 28h for
device word width to determine page-mode data
output width. 00h indicates no read page buffer.
Number of synchronous mode read configuration
fields that follow. 00h indicates no burst capabili-
ty.
Address
127:
Hex
Code
- -05
ASCII Value
(DQ[7:0])
32 byte
1
(P+1E)h
128:
- -04
4
PDF: 09005aef845667b3
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN
55
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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2013 Micron Technology, Inc. All rights reserved.