512Mb, 1Gb, 2Gb: P30-65nm
DC Electrical Specifications
DC Electrical Specifications
Table 35: DC Current Characteristics
CMOS Inputs
(V
CCQ
= 1.7–
3.6V)
Parameter
Input load current
512Mb
1Gb
2Gb
Output leakage
current
DQ[15:0], WAIT
V
CC
standby,
power-down
512Mb
1Gb
2Gb
512Mb
1Gb
2Gb
I
CCS
,
I
CCD
I
LO
Symbol
I
LI
Typ
–
–
–
–
70
75
150
Max
±1
±2
±1
±2
225
240
480
TTL Inputs
(V
CCQ
= 2.4–
3.6V)
Typ
–
–
–
–
70
75
150
Max
±2
±4
±10
±20
225
240
480
µA
µA
Unit Test Conditions
µA
V
CC
= V
CC
(MAX)
V
CCQ
= V
CCQ
(MAX)
V
IN
= V
CCQ
or V
SS
V
CC
= V
CC
(MAX)
V
CCQ
= V
CCQ
(MAX)
V
IN
= V
CCQ
or V
SS
V
CC
= V
CC
(MAX)
V
CCQ
= V
CCQ
(MAX)
CE# = V
CCQ
RST# = V
CCQ
(for I
CCS
)
RST# = V
SS
(for I
CCD
)
WP# = V
IH
1. 2
Notes
1, 6
Average Asynchronous
V
CC
read single-word
current
f
= 5 MHz (1 CLK)
Page mode read
f
= 13 MHz (17 CLK)
Synchronous burst
f
= 52 MHz, LC = 4
V
CC
program current,
V
CC
erase current
I
CCR
26
12
19
16
21
31
16
22
18
24
50
50
225
240
26
12
19
16
21
35
35
70
75
31
16
22
18
24
50
50
225
240
mA 16-word read V
CC
= V
CC
(MAX)
mA 16-word read CE# = V
IL
OE# = V
IH
mA 8-word read
Inputs:
mA 16-word read V or V
IL
IH
mA Continuous
read
mA V
PP
= V
PPL
,
program/erase in progress
V
PP
= V
PPH
,
program/erase in progress
µA
CE# = V
CCQ
, suspend in progress
1
I
CCW,
I
CCE
35
35
1, 3, 5
1, 3, 5
1, 3, 4
V
CC
program sus-
pend current,
V
CC
erase suspend
current
512Mb
1Gb
2Gb
I
CCWS,
I
CCES
70
75
V
PP
standby current 512Mb
1Gb
2Gb
V
PP
program suspend current,
V
PP
erase suspend current
V
PP
read
V
PP
program current
I
PPS
0.2
0.2
0.4
0.2
5
5
10
5
0.2
0.2
0.4
0.2
5
5
10
5
µA
V
PP
= V
PPL
,
in standby mode
V
PP
= V
PPL
,
suspend in progress
V
PP
= V
PPL
V
PP
= V
PPH
, program in progress
1, 3, 7
µA
1, 3, 7
I
PPWS,
I
PPES
I
PPR
I
PPW
2
0.05
0.05
15
0.1
0.1
2
0.05
0.05
15
0.1
0.1
µA
1, 3
3
mA V
PP
= V
PPL
, program in progress
PDF: 09005aef845667b3
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN
74
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2013 Micron Technology, Inc. All rights reserved.
MICRON [ MICRON TECHNOLOGY ]
