512Mb, 1Gb, 2Gb: P30-65nm
DC Electrical Specifications
Table 35: DC Current Characteristics (Continued)
CMOS Inputs
(V
CCQ
= 1.7–
3.6V)
Parameter
V
PP
erase current
V
PP
blank check
Notes:
Symbol
I
PPE
I
PPBC
Typ
0.05
0.05
0.05
0.05
Max
0.1
0.1
0.1
0.1
TTL Inputs
(V
CCQ
= 2.4–
3.6V)
Typ
0.05
0.05
0.05
0.05
Max
0.1
0.1
0.1
0.1
Unit Test Conditions
mA V
PP
= V
PPL
, erase in progress
V
PP
= V
PPH
, erase in progress
mA V
PP
= V
PPL
V
PP
= V
PPH
3
Notes
3
1. All currents are RMS unless noted. Typical values at TYP V
CC
, T
C
= +25°C.
2. I
CCS
is the average current measured over any 5ms time interval 5µs after CE# is de-asser-
ted.
3. Sampled, not 100% tested.
4. I
CCES
is specified with the device deselected. If device is read while in erase suspend, cur-
rent is I
CCES
plus I
CCR
.
5. I
CCW
, I
CCE
measured over TYP or MAX times specified in (page 0 ).
6. if V
IN
> V
CC
, the input load current increases to 10µA MAX.
7. the I
PPS,
I
PPWS,
I
PPES
will increase to 200µA when V
PP
/WP# is at V
PPH
.
Table 36: DC Voltage Characteristics
CMOS Inputs
(V
CCQ
= 1.7–3.6V)
Parameter
Input low voltage
Input high voltage
Output low voltage
Symbol
V
IL
V
IH
V
OL
Min
–0.5
V
CCQ
- 0.4
–
Max
0.4
V
CCQ
+ 0.5
0.2
TTL Inputs
1
(V
CCQ
= 2.4–3.6V)
Min
–0.5
2
–
Max
0.6
V
CCQ
+ 0.5
0.2
Unit Test Conditions
V
V
V
V
CC
= V
CC
(MIN)
V
CCQ
= V
CCQ
(MIN)
I
OL
= 100µA
V
CC
= V
CC
(MIN)
V
CCQ
= V
CCQ
(MIN)
I
OH
= –100µA
3
Notes
2
Output high voltage
V
OH
V
CCQ
- 0.2
–
V
CCQ
– 0.2
–
V
V
PP
lock out voltage
V
PPLK
Notes:
–
0.4
–
0.4
V
1. Synchronous read mode is not supported with TTL inputs.
2. V
IL
can undershoot to –1.0V for durations of 2ns or less and V
IH
can overshoot to V
CCQ
+
1.0V for durations of 2ns or less.
3. V
PP
≤
V
PPLK
inhibits ERASE and PROGRAM operations. Do not use V
PPL
and V
PPH
outside
their valid ranges.
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p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN
75
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