HAL55x, HAL56x
3.6. Electrical Characteristics
at T
J
= –40
°C
to +170
°C
, V
DD
= 4 V to 24 V, as not otherwise specified in Conditions
Typical Characteristics for T
J
= 25
°C
and V
DD
= 12 V
Symbol
I
DDlow
I
DDhigh
V
DDZ
f
osc
f
osc
t
en(O)
t
r
t
f
R
thJSB
case
SOT-89B
R
thJA
case
TO-92UA
1)
Parameter
Low Current Consumption
over Temperature Range
High Current Consumption
over Temperature Range
Overvoltage Protection
at Supply
Internal Oscillator
Chopper Frequency
Internal Oscillator Chopper Fre-
quency over Temperature Range
Enable Time of Output after
Setting of V
DD
Output Rise Time
Output Fall Time
Thermal Resistance Junction
to Substrate Backside
Pin No.
1
Min.
2
Typ.
3.3
Max.
5
Unit
mA
Conditions
1
12
14.3
17
mA
I
DD
= 25 mA, T
J
= 25
°C,
t = 20 ms
T
J
= 25
°C
1
–
28.5
32
V
–
90
145
–
kHz
–
75
145
–
kHz
µs
µs
µs
K/W
1)
1
20
30
1
1
–
–
0.4
0.4
150
1.6
1.6
200
V
DD
= 12 V, R
s
= 30
Ω
V
DD
= 12 V, R
s
= 30
Ω
Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 3–3
Thermal Resistance Junction
to Soldering Point
–
–
150
200
K/W
B > B
ON
+ 2 mT or B < B
OFF
– 2 mT for HAL 55x,
B > B
OFF
+ 2 mT or B < B
ON
– 2 mT for HAL 56x
5.0
2.0
2.0
1.0
Fig. 3–3:
Recommended pad size SOT-89B
Dimensions in mm
8
Micronas
MICRONAS [ MICRONAS ]
