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MT41J512M4 参数 Datasheet PDF下载

MT41J512M4图片预览
型号: MT41J512M4
PDF下载: 下载PDF文件 查看货源
内容描述: 2GB : X4,X8 , X16 DDR3 SDRAM特点 [2Gb: x4, x8, x16 DDR3 SDRAM Features]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 211 页 / 2907 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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2GB : X4,X8 , X16 DDR3 SDRAM
特点
图51 :模式寄存器0 ( MR0 )定义........................................ .................................................. ...... 135
图52 :读取延迟.............................................................................................................................. 137
图53 :模式寄存器1 ( MR1 )定义........................................ .................................................. 138 .......
图54 :读取延迟( AL = 5 , CL = 6) ....................................................................................................... 141
图55 :模式寄存器2 ( MR2 )定义........................................ .................................................. ....... 142
图56 : CAS写入延迟...................................................................................................................... 143
图57 :模式寄存器3 ( MR3 )定义........................................ .................................................. 145 .......
图58 : MPR框图...................................................................................................................... 146
图59 : MPR系统读取校准与BL8 :固定突发阶单读数................................... 148 ..
图60 : MPR系统读取校准与BL8 :固定突发订单,背到背读出.......................... 149
图61 : MPR系统读取校准与BC4 :低四位,然后高四位.................................. 150 ..
图62 : MPR系统读取校准与BC4 :上半段,然后低四位.................................. 151 ..
图63 : ZQ校准时间( ZQCL和ZQCS ) ....................................... .......................................... 153
图64 :示例:会议
t
RRD ( MIN )和
t
RCD ( MIN ) .............................................. ............................... 154
图65:实施例:
t
一汽............................................................................................................................. 155
图66 :读取延迟.............................................................................................................................. 156
图67 :连续的读突发( BL8 ) ......................................... .................................................. ......... 158
图68 :连续的读突发( BC4 ) ......................................... .................................................. ......... 158
图69 :非连续读爆发....................................................................................................... 159
图70 : READ ( BL8 )写入( BL8 ) .......................................................................................................... 159
图71 : READ ( BC4 )写入( BC4 ) OTF ..................................... .................................................. ........... 160
图72 :读预充电( BL8 ) .......................................................................................................... 160
图73 :读预充电( BC4 ) ......................................................................................................... 161
图74 :读预充电( AL = 5 , CL = 6) ................................... .................................................. ...... 161
图75 :读取自动预充电( AL = 4 , CL = 6) ................................. .................................................. 。 161
图76 :数据输出时序 -
t
DQSQ和数据有效窗口............................................. ....................... 163
图77 :数据选通脉冲时序 - 读......................................................................................................... 164
图78 :计算方法
t
LZ和
t
HZ ................................................. .............................................. 165
图79 :
t
RPRE时间............................................................................................................................... 165
图80 :
t
RPST时间............................................................................................................................... 166
图81 :
t
WPRE时间.............................................................................................................................. 168
图82 :
t
WPST时间.............................................................................................................................. 168
图83 :写突发................................................................................................................................ 169
图84 :连续的写( BL8 )写入( BL8 ) ..................................... ................................................ 170
图85 :连续的写( BC4 )通过OTF写( BC4 ) ................................... ..................................... 170
图86 :非连续写入写入........................................... .................................................. 171 ....
图87 : WRITE ( BL8 )读取( BL8 ) .......................................................................................................... 171
图88 :写入读取( BC4模式寄存器设置) ..................................... ........................................... 172
图89 : WRITE ( BC4 OTF )读取( BC4 OTF ) .................................... .................................................. ..... 173
图90 : WRITE ( BL8 )预充电........................................................................................................ 174
图91 : WRITE ( BC4模式寄存器设置)预充电...................................... ................................ 174
图92 : WRITE ( BC4 OTF )预充电........................................ .................................................. ...... 175
图93 :数据输入时序........................................................................................................................ 176
图94 :自刷新进入/退出时机...................................................................................................... 178
图95 :主动掉电出入境........................................ .................................................. ...... 182
图96 :预充电掉电(快速退出模式)进入和退出.................................. ............................... 183
图97 :预充电掉电(慢退出模式)进入和退出.................................. .............................. 183
图98 :掉电输入读或读与自动预充电( RDAP )后................................. ............ 184
图99 :掉电输入写.........................................后.................................................. ......... 184
图100 :掉电输入写带自动预充电( WRAP )后................................... ................... 185
图101 :刷新掉电输入......................................... .................................................. 185 .......
图102 :激活掉电输入......................................... .................................................. ...... 186
PDF : 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf - 修订版Q 04/13 EN
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