MRF581/MRF581A
ELECTRICAL SPECIFICATIONS (Tcase = 25
°
C)
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Test Conditions
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc)
Collector Cutoff Current
(VCE = 2.0 Vdc, VBE = 0 Vdc)
MRF581
MRF581A
Min.
18
15
30
2.5
-
-
Value
Typ.
-
-
-
-
-
Max.
-
-
-
0.1
0.1
Unit
Vdc
Vdc
Vdc
mA
mA
(on)
HFE
DC Current Gain
(IC = 50 mAdc, VCE = 5.0 Vdc)
MRF581
MRF581A
50
90
-
200
250
-
DYNAMIC
Symbol
COB
Ftau
Test Conditions
Min.
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Current-Gain Bandwidth Product
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
-
-
Value
Typ.
2.0
5.0
Max.
3.0
-
Unit
pF
GHz
MSC1318.PDF 10-25-99
MICROSEMI [ MICROSEMI CORPORATION ]
