11.0-17.0 GHz GaAs MMIC
Receiver
October 2006 - Rev 13-Oct-06
R1007
App Note [1] Biasing
- As shown in the bonding diagram, this device is operated by separately biasing Vd1=4.0V with Id1=80mA and
Vd3=4.0V with Id3=100mA. Additionally, a mixer bias is also required with Vg4=-0.5V. Adjusting Vg4 above or below this value can adversely
affect conversion gain, image rejection and intercept point performance. It is also recommended to use active biasing to keep the currents
constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the
power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in
series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain
voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage.
Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement
-
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if
gate or drains are tied together) of DC bias pads.
For Individual Stage Bias -- Each DC pad (Vd1,3 and Vg1,2,3,4) needs to have DC bypass capacitance (~100-200 pF) as close to the device as
possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF
XR1007, MTTF (yrs) vs. Backplate Temperature (°C)
1.0E+06
1.0E+05
MTTF (years)
1.0E+04
1.0E+03
1.0E+02
1.0E+01
1.0E+00
55
65
75
Temperature (°C)
85
95
MTTF is calculated from accelerated life-time data of single devices and assumes isothermal back-plate.
Bias Conditions:
Vd1=4.0V, Id1=80mA, Vd3=4.0V, Id3=100 mA
Typical Application
RF IN
11.0-17.0 GHz
XR1007
Coupler
BPF
IF Out
2 GHz
LNA
IR Mixer
AGC Control
Buffer
LO(+3.0dBm)
9.0-15.0 GHz (USB Operation)
13.0-19.0 GHz (LSB Operation)
Mimix Broadband MMIC-based 11.0-17.0 GHz Receiver Block Diagram
Mimix Broadband's 11.0-17.0 GHz GaAs MMIC Receiver can be used in saturated radio applications and linear modulation schemes up to
128 QAM. The receiver can be used in upper and lower sideband applications from 11.0-17.0 GHz.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 8
Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
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