MITSUBISHI IGBT MODULES
CM100E3U-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
c
= 25°C)
Peak Collector Current
Emitter Current** (T
c
= 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T
c
= 25°C, T
j
≤
150°C)
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
V
iso
CM100E3U-24H
-40 to 150
-40 to 125
1200
±20
100
200*
100
200*
650
2.5 ~ 3.5
3.5 ~ 4.5
310
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
V
FM
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 10mA, V
CE
= 10V
I
C
= 100A, V
GE
= 15V, T
j
= 25°C
I
C
= 100A, V
GE
= 15V, T
j
= 125°C
Total Gate Charge
Emitter-Collector Voltage**
Emitter-Collector Voltage
V
CC
= 600V, I
C
= 100A, V
GE
= 15V
I
E
= 100A, V
GE
= 0V
I
F
= 100A, Clamp Diode Part
Min.
–
–
4.5
–
–
–
–
–
Typ.
–
–
6
2.9
2.85
375
–
–
Max.
1
0.5
7.5
3.7
–
–
3.2
3.2
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
t
rr
Q
rr
V
CC
= 600V, I
C
= 100A,
V
GE1
= V
GE2
= 15V,
R
G
= 3.1Ω, Resistive
Load Switching Operation
I
E
= 100A, di
E
/dt = -200A/µs
I
E
= 100A, di
E
/dt = -200A/µs
I
F
= 100A, Clamp Diode Part
di
F
/dt = -200A/µs
V
CE
= 10V, V
GE
= 0V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
0.55
–
0.55
Max.
15
5
3
100
200
300
350
300
–
300
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
ns
µC
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Sep.1998
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
