MITSUBISHI IGBT MODULES
CM100E3U-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(j-c)
R
th(c-f)
Test Conditions
Per IGBT
Per FWDi
Clamp Diode Part
Per Module, Thermal Grease Applied
Min.
–
–
–
–
Typ.
–
–
–
0.035
Max.
0.19
0.35
0.35
–
Units
°C/W
°C/W
°C/W
°C/W
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
200
COLLECTOR CURRENT, I
C
, (AMPERES)
V
GE
= 20V
160
11
160
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
T
j
= 25
o
C
200
15
COLLECTOR CURRENT, I
C
, (AMPERES)
5
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
12
4
3
2
1
120
10
120
80
40
80
40
0
9
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
4
8
12
16
20
0
40
80
120
160
200
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
10
3
T
j
= 25°C
10
2
T
j
= 25°C
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
V
GE
= 0V
8
6
4
2
I
C
= 200A
EMITTER CURRENT, I
E
, (AMPERES)
10
1
C
ies
I
C
= 100A
10
2
C
oes
10
0
C
res
I
C
= 40A
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
1
1.0
1.5
2.0
2.5
3.0
3.5
10
-1
10
-1
10
0
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
Sep.1998
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
