MITSUBISHI IGBT MODULES
CM50TF-28H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
X
Z - M4 THD
(7 TYP.)
G
u
P E
u
P
A
C
Q X
S
Q X
N
G
v
P E
v
P
G
w
P E
w
P
P
G
u
N E
u
N
P
G
v
N E
v
N
G
w
N E
w
N
P
G
B
E
D
G
U
V
W
N
R
K
J
N
U
T
N
AA
L
TAB #110, t = 0.5
M
M
AA
L
Y DIA. (4 TYP.)
V
F
H
AB
P
GuP
P
EuP
GvP
EvP
GwP
EwP
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
six IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM50TF-28H
is a 1400V (V
CES
), 50 Ampere
Six-IGBT Module.
Type
CM
Current Rating
Amperes
50
V
CES
Volts (x 50)
28
GuN
EuN
U
N
GvN
EvN
V
GwN
EwN
W
N
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
Inches
4.02±0.02
3.58±0.02
3.150±0.01
2.913±0.01
1.69
Millimeters
102.0±0.5
91.0±0.5
80.0±0.25
74.0±0.25
43.0
Dimensions
P
Q
R
S
T
U
V
X
Y
Z
AA
AB
Inches
0.65
0.55
0.47
0.43
0.39
0.33
0.32
0.24
0.22 Dia.
M4 Metric
0.08
0.28
Millimeters
16.5
14.0
12.0
11.0
10.0
8.5
8.1
6.0
Dia. 5.5
M4
2.0
7.0
1.18 +0.06/-0.02 30 +1.5/-0.5
1.18
1.16
1.06
0.96
0.87
0.79
0.67
30.0
29.5
27.0
24.5
22.0
20.0
17.0
Sep.1998
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
