CM50TF-28H 参数 Datasheet PDF下载

MITSUBISHI IGBT MODULES

CM50TF-28H

MEDIUM POWER SWITCHING USE

INSULATED TYPE

Absolute Maximum Ratings, T

j

= 25

°

C unless otherwise specified

Ratings

Junction Temperature

Storage Temperature

Collector-Emitter Voltage (G-E-SHORT)

Gate-Emitter Voltage (C-E-SHORT)

Collector Current (T

C

= 25°C)

Peak Collector Current

Emitter Current** (T

C

= 25°C)

Peak Emitter Current**

Maximum Collector Dissipation (T

C

= 25°C, T

j

≤

150°C)

Mounting Torque, M4 Main Terminal

Mounting Torque, M5 Mounting

Weight

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)

*Pulse width and repetition rate should be such that the device junction temperature (T

j

) does not exceed T

j(max)

rating.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Symbol

T

j

T

stg

V

CES

V

GES

I

C

I

CM

I

E

I

EM

P

c

–

–

–

V

iso

CM50TF-28H

–40 to 150

–40 to 125

1400

±20

50

100*

50

100*

400

0.98 ~ 1.47

1.47 ~ 1.96

540

2500

Units

°C

°C

Volts

Volts

Amperes

Amperes

Amperes

Amperes

Watts

N·m

N·m

Grams

Vrms

Static Electrical Characteristics, T

j

= 25

°

C unless otherwise specified

Characteristics

Collector-Cutoff Current

Gate Leakage Current

Gate-Emitter Threshold Voltage

Collector-Emitter Saturation Voltage

Symbol

I

CES

I

GES

V

GE(th)

V

CE(sat)

Q

G

V

EC

Test Conditions

V

CE

= V

CES

, V

GE

= 0V

V

GE

= V

GES

, V

CE

= 0V

I

C

= 5mA, V

CE

= 10V

I

C

= 50A, V

GE

= 15V

I

C

= 50A, V

GE

= 15V, T

j

= 150°C

Total Gate Charge

Emitter-Collector Voltage

V

CC

= 800V, I

C

= 50A, V

GE

= 15V

I

E

= 50A, V

GE

= 0V

Min.

–

–

5.0

–

–

–

–

Typ.

–

–

6.5

3.1

2.95

255

–

Max.

1.0

0.5

8.0

4.2**

–

–

3.8

Units

mA

µA

Volts

Volts

Volts

nC

Volts

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

Dynamic Electrical Characteristics, T

j

= 25

°

C unless otherwise specified

Characteristics

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Resistive

Load

Switching

Times

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Symbol

C

ies

C

oes

C

res

t

d(on)

t

r

t

d(off)

t

f

t

rr

Q

rr

I

E

= 50A, di

E

/dt = –100A/µs

I

E

= 50A, di

E

/dt = –100A/µs

V

CC

= 800V, I

C

= 50A,

V

GE1

= V

GE2

= 15V, R

G

= 6.3Ω

V

GE

= 0V, V

CE

= 10V

Test Conditions

Min.

–

–

–

–

–

–

–

–

–

Typ.

–

–

–

–

–

–

–

–

0.5

Max.

10

3.5

2

100

250

150

500

300

–

Units

nF

nF

nF

ns

ns

ns

ns

ns

µC

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

Thermal and Mechanical Characteristics, T

j

= 25

°

C unless otherwise specified

Characteristics

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Case

Contact Thermal Resistance

Symbol

R

th(j-c)

R

th(j-c)

R

th(c-f)

Test Conditions

Per IGBT

Per FWDi

Per Module, Thermal Grease Applied

Min.

–

–

–

Typ.

–

–

–

Max.

0.31

0.70

0.033

Units

°C/W

°C/W

°C/W

Sep.1998