MITSUBISHI TRANSISTOR MODULES
QM50HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Conditions
Ratings
600
600
600
7
Unit
V
IC=1A, VEB=2V
VEB=2V
V
Emitter open
Collector open
DC
V
V
50
A
–IC
Collector reverse current
Collector dissipation
Base current
DC (forward diode current)
TC=25°C
50
A
PC
310
3
W
A
IB
DC
Surge collector reverse current
(forward diode current)
–ICSM
Peak value of one cycle of 60Hz (half wave)
500
A
Tj
Junction temperature
Storage temperature
Isolation voltage
–40~+150
–40~+125
2500
°C
°C
Tstg
Viso
Charged part to case, AC for 1 minute
Main terminal screw M4
V
0.98~1.47
10~15
N·m
kg·cm
N·m
kg·cm
g
—
—
Mounting torque
Weight
1.47~1.96
15~20
Mounting screw M5
Typical value
90
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Limits
Typ.
—
Symbol
ICEX
Parameter
Test conditions
Unit
Min.
—
Max.
1.0
1.0
200
2.0
2.5
1.75
—
Collector cutoff current
VCE=600V, VEB=2V
VCB=600V, Emitter open
VEB=7V
mA
mA
mA
V
—
—
ICBO
Collector cutoff current
—
—
IEBO
Emitter cutoff current
—
—
VCE (sat)
VBE (sat)
–VCEO
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
IC=50A, IB=0.65A
—
—
V
—
—
–IC=50A (diode forward voltage)
IC=50A, VCE=2V/5V
V
75/100
—
—
—
—
1.5
12
ton
µs
—
—
ts
Switching time
VCC=300V, IC=50A, IB1=–IB2=1A
µs
—
—
3.0
0.4
1.3
tf
µs
—
—
Rth (j-c) Q
Rth (j-c) R
Transistor part
Diode part
°C/W
°C/W
Thermal resistance
(junction to case)
—
—
Contact thermal resistance
(case to fin)
—
—
0.15
Rth (c-f)
Conductive grease applied
°C/W
Feb.1999
MITSUBISHI [ Mitsubishi Group ]
