MITSUBISHI TRANSISTOR MODULES
QM50HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
3
2
REVERSE BIAS SAFE OPERATING AREA
160
T
j
=125°C
t
s
, t
f
(µs)
t
s
10
1
7 V
CC
=300V
5 I
B1
=1A
4 I
C
=50A
3
2
t
f
10
0
7
5
4
3
10
–1
COLLECTOR CURRENT I
C
(A)
140
120
100
80
60
40
20
0
0
200
400
600
800
I
B2
=–1A
I
B2
=–3A
I
B2
=–5A
I
B2
=–10A
SWITCHING TIME
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
0
2 3 4 5 7 10
1
BASE REVERSE CURRENT –I
B2
(A)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
FORWARD BIAS SAFE OPERATING AREA
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2 T
C
=25°C
NON–REPETITIVE
10
–1
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
2 3 4 5 7 10
3
DERATING FACTOR OF F. B. S. O. A.
100
90
COLLECTOR CURRENT I
C
(A)
10
D
C
m
s
50
10
0µ
0µ
s
s
SECOND
BREAKDOWN
AREA
DERATING FACTOR (%)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR REVERSE CURRENT –I
C
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10
0
2 3 4 5 710
1
2 3 4 5
0.5
s
1m
80
70
60
50
40
30
20
10
0
0
20
40
60
80 100 120 140 160
COLLECTOR
DISSIPATION
CASE TEMPERATURE
T
C
(°C)
0.4
Z
th (j–c)
(°C/ W)
0.3
10
2
7
5
4
3
2
10
1
7
5
4
3
2
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
0.2
0.1
0
10
–3
2 3 4 5 7 10
–2
2 3 4 5 7 10
–1
2 3 4 5 7 10
0
T
j
=25°C
T
j
=125°C
0.8
1.2
1.6
2.0
2.4
10
0
0.4
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
