ISSUE 1.5 : April 2001
SYS88000RKX - 85/10/12
Absolute Maximum Ratings
(1)
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Storage Temperature
Symbol
V
T
P
T
T
STG
Min
-0.3
-
-55
Typ
-
1.0
-
Max
7.0
-
125
Unit
V
W
o
C
Notes : (1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at those or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temperature
Symbol
V
CC
V
IH
V
IL
T
A
T
AI
Min
4.5
2.2
-0.3
0
-40
Typ
5.0
-
-
-
-
Max
5.5
V
CC
+0.3
0.8
70
85
Unit
V
V
V
o
C
o
C
(Commercial)
(Industrial)
DC Electrical Characteristics
(V
CC
=5V±10%)
T
A
0 to 70
o
C
Parameter
I/P Leakage Current
Operating Current
Standby Supply Current
TTL levels
Address,OE,WE
Symbol Test Condition
I
LI
I
LO
I
CC1
I
SB1
I
SB2
I
SB3
V
OL
V
OH
CMOS levels
-L Version (CMOS)
Min Typ
-16
-16
-
-
-
-
-
2.4
-
-
-
-
-
-
-
-
max
16
16
170
48
32
2
0.4
-
Unit
µA
µA
mA
mA
mA
mA
V
V
0V < V
IN
< V
CC
CS = V
IH,
V
I/O
= GND to V
CC
Min. Cycle, CS = V
IL
,V
IL
<V
IN
<V
IH
CS = V
IH
CS
>
V
CC
-0.2V, 0.2<V
IN
<V
CC
-0.2V
CS
>
V
CC
-0.2V, 0.2<V
IN
<V
CC
-0.2V
I
OL
= 8.0mA
I
OH
= -4.0mA
Output Leakage Current
Output Voltage
Typical values are at V
CC
=5.0V,T
A
=25
o
C and specified loading.
Add 800mA to -L CMOS standby currents to obtain industrial temp range parameters.
Capacitance
(V
CC
=5V±10%,T
A
=25
o
C)
Note: Capacitance calculated, not measured.
Parameter
Input Capacitance
(Address,OE,WE)
I/P Capacitance
(other)
I/O Capacitance
Symbol Test Condition
C
IN1
C
IN2
C
I/O
V
IN
= 0V
V
IN
= 0V
V
I/O
= 0V
max
128
10
160
Unit
pF
pF
pF
2
MOSAIC [ MOSAIC ]
