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V53C16258SHT25 参数 Datasheet PDF下载

V53C16258SHT25图片预览
型号: V53C16258SHT25
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能256K ×16 EDO页模式的CMOS动态RAM可选自刷新 [HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 20 页 / 560 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
 浏览型号V53C16258SHT25的Datasheet PDF文件第4页浏览型号V53C16258SHT25的Datasheet PDF文件第5页浏览型号V53C16258SHT25的Datasheet PDF文件第6页浏览型号V53C16258SHT25的Datasheet PDF文件第7页浏览型号V53C16258SHT25的Datasheet PDF文件第9页浏览型号V53C16258SHT25的Datasheet PDF文件第10页浏览型号V53C16258SHT25的Datasheet PDF文件第11页浏览型号V53C16258SHT25的Datasheet PDF文件第12页  
MO SEL VITELIC  
V53C16258H  
Truth Table  
Function  
RAS  
LCAS UCAS  
WE  
X
OE  
X
ADDRESS I/O  
Notes  
Standby  
H
L
L
H
L
L
H
L
X
High-Z  
Data Out  
Read: Word  
Read: Lower Byte  
H
L
ROW/COL  
ROW/COL  
H
H
L
Lower Byte, Data-Out  
Upper Byte, High-Z  
Read: Upper Byte  
L
H
L
H
L
ROW/COL  
Lower Byte, High-Z  
Upper Byte, Data-Out  
Write: Word (Early-Write)  
Write: Lower Byte (Early)  
L
L
L
L
L
L
L
X
X
ROW/COL  
ROW/COL  
Data-In  
H
Lower Byte, Data-In  
Upper Byte, High-Z  
Read: Upper Byte (Early)  
L
H
L
L
X
ROW/COL  
Lower Byte, High-Z  
Upper Byte, Data-In  
Read-Write  
L
L
HL  
HL  
HL  
L
L
HL  
HL  
HL  
L
HL  
LH  
ROW/COL  
COL  
Data-Out, Data-In  
Data-Out  
1, 2  
2
EDO Page-Mode Read  
EDO Page-Mode Write  
EDO Page-Mode Read-Write  
Hidden Refresh Read  
RAS-Only Refresh  
CBR Refresh  
L
H
L
L
X
L
L
COL  
Data-In  
2
HL  
H
LH  
L
COL  
Data-Out, Data-In  
Data-Out  
1, 2  
2
LHL  
L
ROW/COL  
ROW  
X
H
H
X
X
High-Z  
HL  
HL  
L
L
X
X
High-Z  
3
Self Refresh  
L
H
X
X
X
High-Z  
Notes:  
1. Byte Write cycles LCAS or UCAS active.  
2. Byte Read cycles LCAS or UCAS active.  
3. Only one of the two CAS must be active (LCAS or UCAS).  
V53C16258H Rev. 3.8 November 1999  
8