BC556,B BC557A,B,C BC558B
BC556
–1.0
hFE , DC CURRENT GAIN (NORMALIZED)
VCE = –5.0 V
TA = 25°C
2.0
1.0
0.5
V, VOLTAGE (VOLTS)
TJ = 25°C
–0.8
VBE(sat) @ IC/IB = 10
–0.6
VBE @ VCE = –5.0 V
–0.4
–0.2
0.2
0
–0.2
VCE(sat) @ IC/IB = 10
–1.0 –2.0 –5.0 –10 –20 –50 –100 –200
IC, COLLECTOR CURRENT (AMP)
–0.5
–50 –100 –200
–5.0 –10 –20
–1.0 –2.0
IC, COLLECTOR CURRENT (mA)
–0.1 –0.2
Figure 7. DC Current Gain
Figure 8. “On” Voltage
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
–2.0
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
–1.0
–1.6
IC =
–10 mA
–20 mA
–50 mA
–100 mA –200 mA
–1.4
–1.2
–1.8
θ
VB for VBE
–55°C to 125°C
–0.8
–2.2
–0.4
TJ = 25°C
0
–0.02
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
IB, BASE CURRENT (mA)
–5.0
–10
–20
–2.6
–3.0
–0.2
–0.5 –1.0
–50
–2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mA)
–100 –200
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
f T, CURRENT–GAIN – BANDWIDTH PRODUCT
40
TJ = 25°C
C, CAPACITANCE (pF)
20
Cib
500
VCE = –5.0 V
200
100
50
10
8.0
6.0
4.0
2.0
–0.1 –0.2
Cob
20
–0.5 –1.0 –2.0
–5.0 –10 –20
VR, REVERSE VOLTAGE (VOLTS)
–50 –100
–100
–1.0
–10
IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MOTOROLA [ MOTOROLA, INC ]
