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N02L163WN1AB1-55I 参数 Datasheet PDF下载

N02L163WN1AB1-55I图片预览
型号: N02L163WN1AB1-55I
PDF下载: 下载PDF文件 查看货源
内容描述: 2MB超低功耗异步SRAM CMOS [2Mb Ultra-Low Power Asynchronous CMOS SRAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 11 页 / 264 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.  
Functional Block Diagram  
N02L163WN1A  
Word  
Address  
Inputs  
Address  
Decode  
Logic  
A0 - A3  
Input/  
Page  
32K Page  
x 16 word  
x 16 bit  
Address  
Inputs  
Output  
I/O0 - I/O7  
Mux  
Address  
Decode  
Logic  
A4 - A16  
and  
RAM Array  
Buffers  
I/O8 - I/O15  
CE  
WE  
OE  
UB  
LB  
Control  
Logic  
Functional Description  
1
CE  
WE  
OE  
UB  
LB  
MODE  
POWER  
I/O0 - I/O15  
Standby2  
Active  
Write3  
H
L
L
L
L
X
X
L
X
X
X3  
L
H
X
H
L1  
L1  
X
X
H
L1  
L1  
X
High Z  
High Z  
Data In  
Data Out  
High Z  
Standby  
Active  
Active  
Active  
Active  
H
H
Read  
Active  
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7  
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.  
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally  
isolated from any external influence and disabled from exerting any influence externally.  
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.  
1
Capacitance  
Item  
Symbol  
CIN  
Test Condition  
Min  
Max  
8
Unit  
pF  
VIN = 0V, f = 1 MHz, TA = 25oC  
VIN = 0V, f = 1 MHz, TA = 25oC  
Input Capacitance  
I/O Capacitance  
CI/O  
8
pF  
1. These parameters are verified in device characterization and are not 100% tested  
(DOC# 14-02-014 REV L ECN# 01-1000)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
3