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N02L163WN1AB1-55I 参数 Datasheet PDF下载

N02L163WN1AB1-55I图片预览
型号: N02L163WN1AB1-55I
PDF下载: 下载PDF文件 查看货源
内容描述: 2MB超低功耗异步SRAM CMOS [2Mb Ultra-Low Power Asynchronous CMOS SRAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 11 页 / 264 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.  
Timing Test Conditions  
N02L163WN1A  
Item  
0.1VCC to 0.9 VCC  
Input Pulse Level  
Input Rise and Fall Time  
Input and Output Timing Reference Levels  
Output Load  
5ns  
0.5 VCC  
CL = 30pF  
-40 to +85 oC  
Operating Temperature  
Timing  
2.3 - 3.6 V  
2.7 - 3.6 V  
Item  
Symbol  
Units  
Min.  
Max.  
Min.  
Max.  
tRC  
tAA  
tCO  
tOE  
Read Cycle Time  
70  
55  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time  
70  
70  
35  
35  
55  
55  
30  
30  
Chip Enable to Valid Output  
Output Enable to Valid Output  
Byte Select to Valid Output  
Chip Enable to Low-Z output  
Output Enable to Low-Z Output  
Byte Select to Low-Z Output  
Chip Disable to High-Z Output  
Output Disable to High-Z Output  
Byte Select Disable to High-Z Output  
Output Hold from Address Change  
Write Cycle Time  
t
LB, tUB  
tLZ  
10  
5
10  
5
tOLZ  
tLBZ, tUBZ  
tHZ  
10  
0
10  
0
20  
20  
20  
20  
20  
20  
tOHZ  
0
0
t
LBHZ, tUBHZ  
tOH  
0
0
10  
70  
50  
50  
50  
40  
0
10  
55  
40  
40  
40  
40  
0
tWC  
tCW  
Chip Enable to End of Write  
Address Valid to End of Write  
Byte Select to End of Write  
Write Pulse Width  
tAW  
tLBW, tUBW  
tWP  
tAS  
Address Setup Time  
tWR  
Write Recovery Time  
0
0
tWHZ  
tDW  
Write to High-Z Output  
20  
20  
Data to Write Time Overlap  
Data Hold from Write Time  
End Write to Low-Z Output  
40  
0
35  
0
tDH  
tOW  
10  
10  
ns  
(DOC# 14-02-014 REV L ECN# 01-1000)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
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