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N04M1618L1AB-85I 参数 Datasheet PDF下载

N04M1618L1AB-85I图片预览
型号: N04M1618L1AB-85I
PDF下载: 下载PDF文件 查看货源
内容描述: 4Mb的超低功耗异步医疗CMOS SRAM 256Kx16位 [4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit]
分类和应用: 医疗静态存储器
文件页数/大小: 9 页 / 258 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.
Timing Waveform of Write Cycle (WE control)
t
WC
Address
t
AW
CE1#
t
CW
CE2
t
LBW
, t
UBW
LB#, UB#
t
AS
WE#
t
DW
High-Z
Data In
t
WHZ
Data Out
t
WP
N04M1618L1A
t
WR
t
DH
Data Valid
t
OW
High-Z
Timing Waveform of Write Cycle (CE1 Control)
t
WC
Address
t
AW
CE1#
(for CE2 Control, use
inverted signal)
LB#, UB#
t
WP
WE#
t
DW
Data In
t
LZ
Data Out
t
WHZ
t
DH
t
CW
t
AS
t
LBW
, t
UBW
t
WR
Data Valid
High-Z
Stock No. 23209-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
7